PH1730AL,115 NXP Semiconductors, PH1730AL,115 Datasheet - Page 11
PH1730AL,115
Manufacturer Part Number
PH1730AL,115
Description
MOSFET N-CH TRENCH 30V LFPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PH1730AL115.pdf
(14 pages)
Specifications of PH1730AL,115
Package / Case
LFPak-4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.7 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.15V @ 1mA
Gate Charge (qg) @ Vgs
77.9nC @ 10V
Input Capacitance (ciss) @ Vds
5057pF @ 12V
Power - Max
109W
Mounting Type
Surface Mount
Gate Charge Qg
36.2 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.7 mOhms
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
100 A
Power Dissipation
109 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934063082115
NXP Semiconductors
8. Revision history
Table 7.
PH1730AL_3
Product data sheet
Document ID
PH1730AL_3
Modifications:
PH1730AL_2
PH1730AL_1
Revision history
Release date
20100112
20090121
20080911
•
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Preliminary data sheet
Rev. 03 — 12 January 2010
Change notice
-
-
-
N-channel TrenchMOS logic level FET
Supersedes
PH1730AL_2
PH1730AL_1
-
PH1730AL
© NXP B.V. 2010. All rights reserved.
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