PH1730AL,115 NXP Semiconductors, PH1730AL,115 Datasheet - Page 6

• Manufacturer Part Number: PH1730AL,115
• Description: MOSFET N-CH TRENCH 30V LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PH1730AL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 77.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 5057pF @ 12V
• Power - Max: 109W
• Mounting Type: Surface Mount
• Gate Charge Qg: 36.2 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 100 A
• Power Dissipation: 109 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063082115

NXP Semiconductors
Table 6.
[1]
PH1730AL_3
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
Tested to JEDEC standards where applicable.
(A)
(S)
I
g
300
250
200
150
100
200
150
100
D
fs
50
50
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
10
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
4
3.6
3.4
2
20
4
…continued
40
V
GS
6
(V) = 3.2
Conditions
I
see
I
V
S
S
2.4
DS
3
2.8
2.6
2.2
60
= 25 A; V
= 20 A; dI
All information provided in this document is subject to legal disclaimers.
Figure 17
= 20 V
8
003aac449
003aac452
V
I
D
DS
(A)
(V)
Rev. 03 — 12 January 2010
GS
10
80
S
/dt = -100 A/µs; V
= 0 V; T
j
= 25 °C;
Fig 6.
Fig 8.
R
(mΩ)
GS
DSon
(A)
80
60
40
20
I
D
5
4
3
2
1
0
= 0 V;
of drain current; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
0
0
N-channel TrenchMOS logic level FET
50
1
T
j
= 150 °C
100
Min
-
-
-
2
150
V
Typ
0.78
45
56
GS
PH1730AL
(V) = 3.4
25 °C
3
© NXP B.V. 2010. All rights reserved.
200
V
003aac450
003aac453
GS
Max
1.2
-
-
I
D
3.6
10
(A)
(V)
7
4
250
4
Unit
V
ns
nC
6 of 14