MOSFET N-CH 40V 75A D2PAK

 

BUK9606-40B,118

Manufacturer Part NumberBUK9606-40B,118
DescriptionMOSFET N-CH 40V 75A D2PAK
ManufacturerNXP Semiconductors
SeriesTrenchMOS™
BUK9606-40B,118 datasheets

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BUK9606-40B,118 cross reference pin-to-pin replacement

Part numberManufacturerVdsIdPackageConfigurationDatasheet
AP92T03GS  AP92T03GS Advanced Power Electronics Corp. 30V 80A TO-263 Single N AP92T03GP.pdf
AP70T03AS  AP70T03AS Advanced Power Electronics Corp. 30V 60A TO-263 Single N AP70T03AS.pdf
AP85T03GS-HF  AP85T03GS-HF Advanced Power Electronics Corp. 30V 75A TO-263 Single N AP85T03GP-HF.pdf
AP9468GS  AP9468GS Advanced Power Electronics Corp. 40V 80A TO-263 Single N AP9468GS.pdf
AP90T03GS  AP90T03GS Advanced Power Electronics Corp. 30V 75A TO-263 Single N AP90T03GS.pdf
AP60N03GS  AP60N03GS Advanced Power Electronics Corp. 30V 55A TO-263 Single N AP60N03GS.pdf
AP70T03GS  AP70T03GS Advanced Power Electronics Corp. 30V 60A TO-263 Single N AP70T03GP.pdf
AP92U03GS-HF  AP92U03GS-HF Advanced Power Electronics Corp. 30V 80A TO-263 Single N AP92U03GS-HF.pdf
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Specifications of BUK9606-40B,118

Package / CaseD²Pak, TO-263 (2 leads + tab)Mounting TypeSurface Mount
Power - Max203WFet TypeMOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs44nC @ 5VVgs(th) (max) @ Id2V @ 1mA
Current - Continuous Drain (id) @ 25° C75ADrain To Source Voltage (vdss)40V
Fet FeatureLogic Level GateRds On (max) @ Id, Vgs5 mOhm @ 25A, 10V
Minimum Operating Temperature- 55 CConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.005 Ohm @ 10 V
Drain-source Breakdown Voltage40 VGate-source Breakdown Voltage+/- 15 V
Continuous Drain Current129 APower Dissipation203000 mW
Maximum Operating Temperature+ 175 CMounting StyleSMD/SMT
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names934057715118::BUK9606-40B /T3::BUK9606-40B /T3
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BUK9606-40B
N-channel TrenchMOS logic level FET
Rev. 02 — 1 February 2011
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
1.3 Applications
12 V loads
Automotive systems
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Static characteristics
R
DSon
Quick reference data
Parameter
Conditions
≥ 25 °C; T
drain-source voltage
T
j
drain current
V
= 5 V; T
GS
see
Figure
total power dissipation
T
= 25 °C; see
mb
drain-source on-state
V
= 10 V; I
GS
resistance
T
= 25 °C
j
V
= 5 V; I
GS
T
= 25 °C; see
j
see
Figure 12
Product data sheet
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
Min
Typ
≤ 175 °C
-
-
j
[1]
= 25 °C;
-
-
mb
1; see
Figure 3
Figure 2
-
-
= 25 A;
-
4.1
D
= 25 A;
-
5.7
D
Figure
11;
Max Unit
40
V
75
A
203
W
5
mΩ
6.4
mΩ

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BUK9606-40B,118 Summary of contents

  • Page 1

    ... BUK9606-40B N-channel TrenchMOS logic level FET Rev. 02 — 1 February 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

  • Page 2

    ... see Figure 13 Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9606-40B N-channel TrenchMOS logic level FET Min ≤ sup = °C; unclamped = °C; j Graphic symbol ...

  • Page 3

    ... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9606-40B N-channel TrenchMOS logic level FET Min - - -15 [1] Figure 1; - [ see Figure 1 - ≤ 10 µs; - ...

  • Page 4

    ... Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK9606-40B Product data sheet Limit DSon DS D Capped due to package 1 All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9606-40B N-channel TrenchMOS logic level FET 03nm21 = 10 μ 100 μ 100 ...

  • Page 5

    ... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9606-40B Product data sheet Conditions see Figure 4 minimum footprint ; mounted on a PCB −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9606-40B N-channel TrenchMOS logic level FET Min Typ - - - 50 03nm22 t p δ ...

  • Page 6

    ... ° ° see Figure /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9606-40B N-channel TrenchMOS logic level FET Min Typ Max = 25 ° -55 ° 1.1 1 2 500 ...

  • Page 7

    ... R (mΩ (V) DS Fig 6. 03ng53 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9606-40B N-channel TrenchMOS logic level FET 12 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values 140 g fs (S) 105 70 35 ...

  • Page 8

    ... Fig 12. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9606-40B N-channel TrenchMOS logic level FET max typ min 0 60 120 Label 3.2 3.4 3.6 3 ...

  • Page 9

    ... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.0 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9606-40B N-channel TrenchMOS logic level FET 7000 C C iss (pF) 5250 C oss 3500 C rss 1750 0 −2 −1 ...

  • Page 10

    ... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9606-40B N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © ...

  • Page 11

    ... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9606-40B separated from data sheet BUK95_9606_40B v.1. BUK95_9606_40B v.1 20030514 BUK9606-40B Product data sheet ...

  • Page 12

    ... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9606-40B N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...

  • Page 13

    ... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9606-40B N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...

  • Page 14

    ... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 1 February 2011 Document identifier: BUK9606-40B ...

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