PSMN015-100P,127 NXP Semiconductors, PSMN015-100P,127 Datasheet - Page 11

• Manufacturer Part Number: PSMN015-100P,127
• Description: MOSFET N-CH 100V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN015-100P,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.015 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055640127::PSMN015-100P::PSMN015-100P

Philips Semiconductors
8. Revision history
Table 6:
9397 750 12543
Product data
Rev Date
05
20040114
Revision history
CPCN
HZG463a
Description
Product data (9397 750 12543); supersedes Product specification
PSMN015-100P, PSMN015-100B Rev 1.200 of June 2003
Modifications:
•
•
•
•
•
•
•
•
•
The format of this data sheet has been redesigned to comply with the new presentation
and information standards of Philips Semiconductors.
Section 1.4 “Quick reference data”
Section 4 “Limiting values”
Section 4 “Limiting values”
Section 4 “Limiting values” Figure 3
Section 5 “Thermal characteristics” Figure 4
Section 6 “Characteristics”
Section 6 “Characteristics”
values modified.
Section 6 “Characteristics” Figure
Rev. 05 — 14 January 2004
W
modification to E
V
Q
GS(TO)
g(tot),
DSS
changed to E
Q
5, 6, 7, 8, 11,
and
correction to an error in T
gd
graph modified.
N-channel TrenchMOS™ Standard level FET
, C
Section 4 “Limiting values”
PSMN015-100P/100B
iss
, C
DS(AL)S
graph modified.
oss
DS(AL)S
12
, C
.
rss,
and
.
t
don
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
13
, t
modified.
r
, t
j
= 55 C max limit.
doff
, t
V
f
, t
DSS
rr
and Q
changed to V
r
typical
11 of 13
DS
.