PSMN015-100P,127 NXP Semiconductors, PSMN015-100P,127 Datasheet - Page 4

MOSFET N-CH 100V 75A TO220AB

PSMN015-100P,127

Manufacturer Part Number
PSMN015-100P,127
Description
MOSFET N-CH 100V 75A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PSMN015-100P,127

Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
90nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
75 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055640127::PSMN015-100P::PSMN015-100P
Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 12543
Product data
Symbol Parameter
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
th(j-mb)
th(j-a)
Z th(j-mb)
(K/W)
10 -1
10 -2
10 -3
10
1
10 -5
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Thermal characteristics
SOT78
SOT404
0.2
0.1
0.05
0.02
= 0.5
single pulse
5.1 Transient thermal impedance
10 -4
Rev. 05 — 14 January 2004
10 -3
Conditions
Figure 4
vertical in still air
mounted on a printed-circuit board;
minimum footprint; vertical in still air
N-channel TrenchMOS™ Standard level FET
PSMN015-100P/100B
10 -2
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
P
t p
Min Typ Max Unit
-
-
-
T
t p (s)
03am52
-
60
50
=
t p
T
t
10 -1
0.5
-
-
4 of 13
K/W
K/W
K/W

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