PSMN015-100P,127 NXP Semiconductors, PSMN015-100P,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN015-100P,127
• Description: MOSFET N-CH 100V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN015-100P,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.015 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055640127::PSMN015-100P::PSMN015-100P

Philips Semiconductors
9397 750 12543
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
I S
j
100
= 25 C and 175 C; V
75
50
25
0
source-drain (diode forward) voltage; typical
values.
0
V GS = 0 V
0.3
175 C
GS
0.6
= 0 V
T j = 25 C
0.9
V SD (V)
03am57
1.2
Rev. 05 — 14 January 2004
Fig 13. Gate-source voltage as a function of gate
V GS
I
(V)
D
10
= 75 A; V
8
6
4
2
0
charge; typical values.
N-channel TrenchMOS™ Standard level FET
0
I D = 75 A
T j = 25 C
PSMN015-100P/100B
DD
= 20 V and 80 V
25
V DD = 20 V
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
50
75
80 V
Q G (nC)
03am59
100
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