PSMN015-100B,118 NXP Semiconductors, PSMN015-100B,118 Datasheet - Page 10

• Manufacturer Part Number: PSMN015-100B,118
• Description: MOSFET N-CH 100V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN015-100B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055639118::PSMN015-100B /T3::PSMN015-100B /T3

Philips Semiconductors
Fig 15. SOT404 (D
9397 750 12543
Product data
Plastic single-ended surface mounted package (Philips version of D
(one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT404
4.50
4.10
A
H D
1.40
1.27
A 1
2
D
-PAK).
D 1
0.85
0.60
b
IEC
0.64
0.46
c
max.
1
D
11
e
E
JEDEC
1.60
1.20
D 1
2
e
REFERENCES
Rev. 05 — 14 January 2004
10.30
9.70
E
3
0
b
2.54
e
scale
EIAJ
2.5
2.90
2.10
L p
5 mm
15.80
14.80
H D
N-channel TrenchMOS™ Standard level FET
PSMN015-100P/100B
mounting
2.60
2.20
2
Q
base
-PAK); 3 leads
L p
A 1
Q
PROJECTION
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
c
EUROPEAN
A
ISSUE DATE
99-06-25
01-02-12
SOT404
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