PSMN015-100B,118 NXP Semiconductors, PSMN015-100B,118 Datasheet - Page 2

MOSFET N-CH 100V 75A SOT404

PSMN015-100B,118

Manufacturer Part Number
PSMN015-100B,118
Description
MOSFET N-CH 100V 75A SOT404
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PSMN015-100B,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
90nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
15 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
75 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055639118::PSMN015-100B /T3::PSMN015-100B /T3
Philips Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 12543
Product data
Type number
PSMN015-100P
PSMN015-100B
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC) T
peak source (diode forward) current T
non-repetitive drain-source
avalanche energy
Ordering information
Limiting values
Package
Name
TO-220AB
D
2
-PAK
Description
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78
Plastic single-ended surface mounted package; 3 leads (1 lead cropped)
Conditions
25 C
25 C
T
T
T
T
unclamped inductive load; I
t
V
p
Rev. 05 — 14 January 2004
mb
mb
mb
mb
mb
mb
GS
= 0.11 ms; V
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 10 V; starting T
T
T
j
j
175 C
175 C; R
Figure 1
GS
DD
GS
= 10 V;
= 10 V;
50 V; R
p
p
j
GS
= 25 C
N-channel TrenchMOS™ Standard level FET
= 20 k
10 s;
10 s
Figure 2
PSMN015-100P/100B
Figure 2
D
GS
= 36 A;
= 50 ;
Figure 3
and
3
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Min
-
-
-
-
-
-
-
-
-
-
55
55
Max
100
100
75
60.8
240
300
+175
+175
75
240
320
20
Version
SOT404
2 of 13
Unit
V
V
V
A
A
A
W
A
A
mJ
C
C

Related parts for PSMN015-100B,118