PSMN015-100B,118 NXP Semiconductors, PSMN015-100B,118 Datasheet - Page 6

• Manufacturer Part Number: PSMN015-100B,118
• Description: MOSFET N-CH 100V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN015-100B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055639118::PSMN015-100B /T3::PSMN015-100B /T3

Philips Semiconductors
9397 750 12543
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
T
(m )
T
(A)
I D
j
j
50
40
30
20
10
= 25 C
30
20
10
= 25 C
0
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
T j = 25 C
T j = 25 C
0.2
10
0.4
20
V GS = 5 V
10 V
0.6
30
6 V
V GS = 4.2 V
5.6 V
0.8
5.2 V
40
V DS (V)
I D (A)
03am55
03am54
5.4 V
5.2 V
4.8 V
4.6 V
4.4 V
5.4 V
5.6 V
10 V
5 V
6 V
Rev. 05 — 14 January 2004
50
1
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
(A)
j
I D
2.5
1.5
0.5
= 25 C and 175 C; V
a
=
80
60
40
20
0
3
2
1
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
N-channel TrenchMOS™ Standard level FET
-60
---------------------------- -
R
0
DSon 25 C
PSMN015-100P/100B
V DS > I D x R DSon
R
DSon
0
2
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
DS
60
175 C
I
D
x R
4
DSon
120
V GS (V)
T j = 25 C
T j ( C)
03am56
03al21
180
6
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