PSMN015-100B,118 NXP Semiconductors, PSMN015-100B,118 Datasheet - Page 7

MOSFET N-CH 100V 75A SOT404

PSMN015-100B,118

Manufacturer Part Number
PSMN015-100B,118
Description
MOSFET N-CH 100V 75A SOT404
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PSMN015-100B,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
90nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
15 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
75 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055639118::PSMN015-100B /T3::PSMN015-100B /T3
Philips Semiconductors
9397 750 12543
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
V GS(th)
I
V
(V)
D
GS
= 1 mA; V
5
4
3
2
1
0
junction temperature.
= 0 V; f = 1 MHz
-60
DS
= V
0
GS
60
max
typ
min
(pF)
C
10 4
10 3
10 2
120
10 -1
T j ( C)
03aa32
180
Rev. 05 — 14 January 2004
1
Fig 10. Sub-threshold drain current as a function of
10
(A)
T
I D
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
j
= 25 C; V
gate-source voltage.
N-channel TrenchMOS™ Standard level FET
V DS (V)
0
PSMN015-100P/100B
C rss
C iss
C oss
03am58
DS
10 2
= 5 V
2
min
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
typ
4
max
V GS (V)
03aa35
6
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