PSMN015-100B,118 NXP Semiconductors, PSMN015-100B,118 Datasheet - Page 9

• Manufacturer Part Number: PSMN015-100B,118
• Description: MOSFET N-CH 100V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN015-100B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055639118::PSMN015-100B /T3::PSMN015-100B /T3

Philips Semiconductors
7. Package outline
Fig 14. SOT78 (TO-220AB).
9397 750 12543
Product data
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
DIMENSIONS (mm are the original dimensions)
Note
1. Terminals in this zone are not tinned.
UNIT
mm
VERSION
OUTLINE
SOT78
4.5
4.1
A
1.39
1.27
A 1
0.9
0.7
b
IEC
D
L
b 1
1.3
1.0
L 1
D 1
(1)
b 1
0.7
0.4
3-lead TO-220AB
c
JEDEC
1
15.8
15.2
e
D
E
p
REFERENCES
2
e
Rev. 05 — 14 January 2004
D 1
6.4
5.9
0
3
b
10.3
9.7
E
L 2
SC-46
q
scale
EIAJ
5
2.54
e
10 mm
15.0
13.5
L
N-channel TrenchMOS™ Standard level FET
mounting
base
PSMN015-100P/100B
L 1
3.30
2.79
(1)
max.
Q
3.0
L 2
A
A 1
PROJECTION
3.8
3.6
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
c
EUROPEAN
p
3.0
2.7
q
2.6
2.2
Q
ISSUE DATE
00-09-07
01-02-16
SOT78
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