PSMN015-110P,127 NXP Semiconductors, PSMN015-110P,127 Datasheet - Page 3

• Manufacturer Part Number: PSMN015-110P,127
• Description: MOSFET N-CH 110V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN015-110P,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 110V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0405 Ohm @ 10 V
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057141127::PSMN015-110P::PSMN015-110P

Philips Semiconductors
9397 750 12544
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P der
P
(%)
120
(A)
mb
10 3
10 2
I D
der
80
40
10
0
1
function of mounting base temperature.
= 25 C; I
0
1
=
---------------------- -
P
tot 25 C
P
tot
DM
50
is single pulse; V
Limit R DSon = V DS / I D
100%
100
GS
= 10 V.
150
T mb ( C)
10
03aa16
DC
200
Rev. 01 — 08 January 2004
Fig 2. Normalized continuous drain current as a
I der
(%)
I
120
der
80
40
0
function of mounting base temperature.
0
=
-------------------
I
D 25 C
10 2
I
D
t p = 10 s
100 s
1 ms
10 ms
50
TrenchMOS™ Standard level FET
100%
PSMN015-110P
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
100
V DS (V)
150
T mb ( C)
03ao25
03an67
200
10 3
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