PSMN015-110P,127 NXP Semiconductors, PSMN015-110P,127 Datasheet - Page 5

MOSFET N-CH 110V 75A TO220AB

PSMN015-110P,127

Manufacturer Part Number
PSMN015-110P,127
Description
MOSFET N-CH 110V 75A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PSMN015-110P,127

Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
90nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
110V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0405 Ohm @ 10 V
Drain-source Breakdown Voltage
110 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057141127::PSMN015-110P::PSMN015-110P

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN015-110P,127
Manufacturer:
Infineon
Quantity:
500
Philips Semiconductors
6. Characteristics
Table 5:
T
9397 750 12544
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
r
= 25 C unless otherwise specified
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
reverse recovery time
recovered charge
Characteristics
Conditions
I
I
V
V
V
I
V
V
V
I
D
D
D
S
S
Rev. 01 — 08 January 2004
DS
GS
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
= 25 A; V
= 20 A; dI
= 250 A; V
= 1 mA; V
= 75 A; V
j
j
j
j
j
j
j
j
j
= 100 V; V
= 20 V; V
= 10 V; I
= 0 V; V
= 50 V; R
= 10 V; R
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 25 C
= 175 C
DD
GS
S
DS
DS
D
/dt = 100 A/ s; V
L
G
GS
= 25 A;
= 0 V;
GS
= 80 V; V
DS
= V
= 1.8
= 25 V; f = 1 MHz;
= 5.6
= 0 V
= 0 V
= 0 V
GS
;
Figure 12
Figure 9
Figure 7
;
GS
= 10 V;
GS
and
= 0 V
Figure 11
Figure 13
8
TrenchMOS™ Standard level FET
PSMN015-110P
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Min
110
99
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
0.05
-
2
12
32.4
90
20
35
4900 -
390
220
25
65
95
50
0.8
80
115
Max
-
-
4
-
4.4
10
500
100
15
40.5
-
-
-
-
-
-
-
-
-
1.1
-
-
5 of 12
Unit
V
V
V
V
V
nA
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
A
A

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