PSMN015-110P,127 NXP Semiconductors, PSMN015-110P,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN015-110P,127
• Description: MOSFET N-CH 110V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN015-110P,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 110V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0405 Ohm @ 10 V
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057141127::PSMN015-110P::PSMN015-110P

Philips Semiconductors
7. Package outline
Fig 14. SOT78 (TO-220AB).
9397 750 12544
Product data
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
DIMENSIONS (mm are the original dimensions)
Note
1. Terminals in this zone are not tinned.
UNIT
mm
VERSION
OUTLINE
SOT78
4.5
4.1
A
1.39
1.27
A 1
0.9
0.7
b
IEC
D
L
b 1
1.3
1.0
L 1
D 1
(1)
b 1
0.7
0.4
3-lead TO-220AB
c
JEDEC
1
15.8
15.2
e
D
E
p
REFERENCES
2
e
Rev. 01 — 08 January 2004
D 1
6.4
5.9
0
3
b
10.3
9.7
E
L 2
SC-46
q
scale
EIAJ
5
2.54
e
10 mm
15.0
13.5
L
mounting
base
L 1
3.30
2.79
(1)
max.
Q
3.0
L 2
TrenchMOS™ Standard level FET
A
A 1
PSMN015-110P
PROJECTION
3.8
3.6
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
c
EUROPEAN
p
3.0
2.7
q
2.6
2.2
Q
ISSUE DATE
00-09-07
01-02-16
SOT78
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