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PSMN015-110P,127
PSMN015-110P,127 | |
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Manufacturer Part Number | PSMN015-110P,127 |
Description | MOSFET N-CH 110V 75A TO220AB |
Manufacturer | NXP Semiconductors |
Series | TrenchMOS™ |
PSMN015-110P,127 datasheet |
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Specifications of PSMN015-110P,127 | |||
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Package / Case | TO-220AB-3 | Mounting Type | Through Hole |
Power - Max | 300W | Fet Type | MOSFET N-Channel, Metal Oxide |
Gate Charge (qg) @ Vgs | 90nC @ 10V | Vgs(th) (max) @ Id | 4V @ 1mA |
Current - Continuous Drain (id) @ 25° C | 75A | Drain To Source Voltage (vdss) | 110V |
Fet Feature | Standard | Rds On (max) @ Id, Vgs | 15 mOhm @ 25A, 10V |
Minimum Operating Temperature | - 55 C | Configuration | Single |
Transistor Polarity | N-Channel | Resistance Drain-source Rds (on) | 0.0405 Ohm @ 10 V |
Drain-source Breakdown Voltage | 110 V | Gate-source Breakdown Voltage | +/- 20 V |
Continuous Drain Current | 75 A | Power Dissipation | 300000 mW |
Maximum Operating Temperature | + 175 C | Mounting Style | SMD/SMT |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Other names | 934057141127::PSMN015-110P::PSMN015-110P |
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Philips Semiconductors
8. Revision history
Table 6:
Revision history
Rev Date
CPCN
Description
01
20040108
HZG463a
Product data (9397 750 12544)
9397 750 12544
Product data
Rev. 01 — 08 January 2004
PSMN015-110P
TrenchMOS™ Standard level FET
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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