PSMN015-110P,127 NXP Semiconductors, PSMN015-110P,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN015-110P,127
• Description: MOSFET N-CH 110V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN015-110P,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 110V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0405 Ohm @ 10 V
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057141127::PSMN015-110P::PSMN015-110P

Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 12544
Product data
Symbol Parameter
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
th(j-mb)
th(j-a)
Z th(j-mb)
(K/W)
10 -1
10 -2
10 -3
10
1
10 -5
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Thermal characteristics
0.2
0.1
0.05
0.02
= 0.5
single pulse
5.1 Transient thermal impedance
10 -4
Rev. 01 — 08 January 2004
10 -3
Conditions
Figure 4
vertical in still air
TrenchMOS™ Standard level FET
10 -2
PSMN015-110P
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
P
t p
Min Typ Max Unit
-
-
T
t p (s)
03am52
-
60
=
t p
T
t
10 -1
0.5
-
4 of 12
K/W
K/W