MOSFET N-CH 110V 75A TO220AB

PSMN015-110P,127

Manufacturer Part NumberPSMN015-110P,127
DescriptionMOSFET N-CH 110V 75A TO220AB
ManufacturerNXP Semiconductors
SeriesTrenchMOS™
PSMN015-110P,127 datasheet
 


Specifications of PSMN015-110P,127

Package / CaseTO-220AB-3Mounting TypeThrough Hole
Power - Max300WFet TypeMOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs90nC @ 10VVgs(th) (max) @ Id4V @ 1mA
Current - Continuous Drain (id) @ 25° C75ADrain To Source Voltage (vdss)110V
Fet FeatureStandardRds On (max) @ Id, Vgs15 mOhm @ 25A, 10V
Minimum Operating Temperature- 55 CConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.0405 Ohm @ 10 V
Drain-source Breakdown Voltage110 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current75 APower Dissipation300000 mW
Maximum Operating Temperature+ 175 CMounting StyleSMD/SMT
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names934057141127::PSMN015-110P::PSMN015-110P
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Philips Semiconductors
5. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
R
thermal resistance from junction to mounting base
th(j-mb)
R
thermal resistance from junction to ambient
th(j-a)
5.1 Transient thermal impedance
10
Z th(j-mb)
(K/W)
1
= 0.5
10 -1
0.2
0.1
0.05
0.02
10 -2
single pulse
10 -3
10 -5
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 12544
Product data
Conditions
Figure 4
vertical in still air
10 -4
10 -3
Rev. 01 — 08 January 2004
PSMN015-110P
TrenchMOS™ Standard level FET
Min Typ Max Unit
-
-
0.5
-
60
-
03am52
t p
P
=
T
t
t p
T
10 -2
10 -1
t p (s)
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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K/W
K/W