MOSFET N-CH 110V 75A TO220AB

PSMN015-110P,127

Manufacturer Part NumberPSMN015-110P,127
DescriptionMOSFET N-CH 110V 75A TO220AB
ManufacturerNXP Semiconductors
SeriesTrenchMOS™
PSMN015-110P,127 datasheet
 


Specifications of PSMN015-110P,127

Package / CaseTO-220AB-3Mounting TypeThrough Hole
Power - Max300WFet TypeMOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs90nC @ 10VVgs(th) (max) @ Id4V @ 1mA
Current - Continuous Drain (id) @ 25° C75ADrain To Source Voltage (vdss)110V
Fet FeatureStandardRds On (max) @ Id, Vgs15 mOhm @ 25A, 10V
Minimum Operating Temperature- 55 CConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.0405 Ohm @ 10 V
Drain-source Breakdown Voltage110 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current75 APower Dissipation300000 mW
Maximum Operating Temperature+ 175 CMounting StyleSMD/SMT
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names934057141127::PSMN015-110P::PSMN015-110P
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Philips Semiconductors
6. Characteristics
Table 5:
Characteristics
T
= 25 C unless otherwise specified
j
Symbol Parameter
Static characteristics
V
drain-source breakdown voltage
(BR)DSS
V
gate-source threshold voltage
GS(th)
I
drain-source leakage current
DSS
I
gate-source leakage current
GSS
R
drain-source on-state resistance
DSon
Dynamic characteristics
Q
total gate charge
g(tot)
Q
gate-source charge
gs
Q
gate-drain (Miller) charge
gd
C
input capacitance
iss
C
output capacitance
oss
C
reverse transfer capacitance
rss
t
turn-on delay time
d(on)
t
rise time
r
t
turn-off delay time
d(off)
t
fall time
f
Source-drain diode
V
source-drain (diode forward) voltage I
SD
t
reverse recovery time
rr
Q
recovered charge
r
9397 750 12544
Product data
Conditions
I
= 250 A; V
= 0 V
D
GS
T
= 25 C
j
T
= 55 C
j
I
= 1 mA; V
= V
;
Figure 9
D
DS
GS
T
= 25 C
j
T
= 175 C
j
T
= 55 C
j
V
= 100 V; V
= 0 V
DS
GS
T
= 25 C
j
T
= 175 C
j
V
= 20 V; V
= 0 V
GS
DS
V
= 10 V; I
= 25 A;
Figure 7
and
GS
D
T
= 25 C
j
T
= 175 C
j
I
= 75 A; V
= 80 V; V
= 10 V;
D
DD
GS
V
= 0 V; V
= 25 V; f = 1 MHz;
GS
DS
V
= 50 V; R
= 1.8
;
DD
L
V
= 10 V; R
= 5.6
GS
G
= 25 A; V
= 0 V;
Figure 12
S
GS
I
= 20 A; dI
/dt = 100 A/ s; V
S
S
GS
Rev. 01 — 08 January 2004
PSMN015-110P
TrenchMOS™ Standard level FET
Min
Typ
Max
110
-
-
99
-
-
2
3
4
1
-
-
-
-
4.4
-
0.05
10
-
-
500
-
2
100
8
-
12
15
-
32.4
40.5
Figure 13
-
90
-
-
20
-
-
35
-
Figure 11
-
4900 -
-
390
-
-
220
-
-
25
-
-
65
-
-
95
-
-
50
-
-
0.8
1.1
= 0 V
-
80
-
-
115
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Unit
V
V
V
V
V
A
A
nA
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
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