MOSFET N-CH 110V 75A TO220AB

PSMN015-110P,127

Manufacturer Part NumberPSMN015-110P,127
DescriptionMOSFET N-CH 110V 75A TO220AB
ManufacturerNXP Semiconductors
SeriesTrenchMOS™
PSMN015-110P,127 datasheet
 


Specifications of PSMN015-110P,127

Package / CaseTO-220AB-3Mounting TypeThrough Hole
Power - Max300WFet TypeMOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs90nC @ 10VVgs(th) (max) @ Id4V @ 1mA
Current - Continuous Drain (id) @ 25° C75ADrain To Source Voltage (vdss)110V
Fet FeatureStandardRds On (max) @ Id, Vgs15 mOhm @ 25A, 10V
Minimum Operating Temperature- 55 CConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.0405 Ohm @ 10 V
Drain-source Breakdown Voltage110 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current75 APower Dissipation300000 mW
Maximum Operating Temperature+ 175 CMounting StyleSMD/SMT
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names934057141127::PSMN015-110P::PSMN015-110P
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Philips Semiconductors
5
V GS(th)
(V)
4
max
3
typ
min
2
1
0
-60
0
60
I
= 1 mA; V
= V
D
DS
GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
V
= 0 V; f = 1 MHz
GS
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 12544
Product data
03aa32
10 -1
I D
(A)
10 -2
10 -3
10 -4
10 -5
10 -6
120
180
T j ( C)
T
= 25 C; V
j
Fig 10. Sub-threshold drain current as a function of
10 4
C
(pF)
10 3
10 2
10 -1
1
10
Rev. 01 — 08 January 2004
PSMN015-110P
TrenchMOS™ Standard level FET
min
typ
max
0
2
4
V GS (V)
= 5 V
DS
gate-source voltage.
03am58
C iss
C oss
C rss
10 2
V DS (V)
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
03aa35
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