MOSFET N-CH 110V 75A TO220AB

PSMN015-110P,127

Manufacturer Part NumberPSMN015-110P,127
DescriptionMOSFET N-CH 110V 75A TO220AB
ManufacturerNXP Semiconductors
SeriesTrenchMOS™
PSMN015-110P,127 datasheet
 


Specifications of PSMN015-110P,127

Package / CaseTO-220AB-3Mounting TypeThrough Hole
Power - Max300WFet TypeMOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs90nC @ 10VVgs(th) (max) @ Id4V @ 1mA
Current - Continuous Drain (id) @ 25° C75ADrain To Source Voltage (vdss)110V
Fet FeatureStandardRds On (max) @ Id, Vgs15 mOhm @ 25A, 10V
Minimum Operating Temperature- 55 CConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.0405 Ohm @ 10 V
Drain-source Breakdown Voltage110 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current75 APower Dissipation300000 mW
Maximum Operating Temperature+ 175 CMounting StyleSMD/SMT
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names934057141127::PSMN015-110P::PSMN015-110P
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Philips Semiconductors
100
V GS = 0 V
I S
(A)
75
50
25
175 C
0
0
0.3
0.6
T
= 25 C and 175 C; V
= 0 V
j
GS
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
9397 750 12544
Product data
03am57
10
V GS
(V)
8
6
4
2
T j = 25 C
0
0.9
1.2
V SD (V)
I
= 75 A; V
D
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
Rev. 01 — 08 January 2004
PSMN015-110P
TrenchMOS™ Standard level FET
I D = 75 A
T j = 25 C
V DD = 20 V
80 V
0
25
50
75
Q G (nC)
= 20 V and 80 V
DD
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
03am59
100
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