PSMN035-150P,127 NXP Semiconductors, PSMN035-150P,127 Datasheet

MOSFET N-CH 150V 50A SOT78

PSMN035-150P,127

Manufacturer Part Number
PSMN035-150P,127
Description
MOSFET N-CH 150V 50A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PSMN035-150P,127

Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
250W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
79nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
50A
Drain To Source Voltage (vdss)
150V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
30 mOhms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
50 A
Power Dissipation
250 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055716127::PSMN035-150P::PSMN035-150P
1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
[1]
1.
2.
Pin
1
2
3
mb
It is not possible to make connection to pin 2 of the SOT404 package.
SiliconMAX is a trademark of Royal Philips Electronics.
TrenchMOS is a trademark of Royal Philips Electronics.
Pinning - SOT78 and SOT404, simplified outline and symbol
Description
gate (g)
drain (d)
source (s)
mounting base;
connected to
drain (d)
c
c
SiliconMAX™
lowest possible on-state resistance for each package.
Product availability:
[1]
PSMN035-150P in SOT78 (TO-220AB)
PSMN035-150B in SOT404 (D
PSMN035-150B;
PSMN035-150P
N-channel enhancement mode field-effect transistor
Rev. 04 — 22 February 2001
Fast switching
Very low on-state resistance.
Switched mode power supplies.
Simplified outline
SOT78 (TO-220AB)
1 2
1
mb
products use the latest TrenchMOS™
3
MBK106
2
-PAK).
SOT404 (D
1
mb
2
3
2-
PAK)
MBK116
2
technology to achieve the
Symbol
Product specification
MBB076
g
d
s

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PSMN035-150P,127 Summary of contents

Page 1

... N-channel enhancement mode field-effect transistor Rev. 04 — 22 February 2001 1. Description SiliconMAX™ lowest possible on-state resistance for each package. Product availability: PSMN035-150P in SOT78 (TO-220AB) PSMN035-150B in SOT404 (D 2. Features Fast switching Very low on-state resistance. 3. Applications Switched mode power supplies. 4. Pinning information ...

Page 2

... T operating junction temperature j Source-drain diode I source (diode forward) current S (DC) I peak source (diode forward) SM current Avalanche ruggedness E non-repetitive avalanche energy AS I non-repetitive avalanche current AS 9397 750 07994 Product specification PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor Conditions 175 Conditions ...

Page 3

... single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 07994 Product specification PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor 03aa16 I der 125 150 175 200 der Fig 2. Normalized continuous drain current as a function of mounting base temperature. ...

Page 4

... Transient thermal impedance Fig 5. Transient thermal impedance from junction to mounting base as a function of 9397 750 07994 Product specification PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor Conditions Figure 5 SOT78 package; vertical in still air SOT404 package; mounted on printed circuit board ...

Page 5

... Source-drain diode V source-drain (diode forward) SD voltage t reverse recovery time rr Q recovered charge r 9397 750 07994 Product specification PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor Conditions Min I = 250 150 mA Figure 2 175 C 1 ...

Page 6

... V 5.2 V 0.10 0.08 0.06 0.04 0. Fig 8. Drain-source on-state resistance as a function of drain current; typical values. 9397 750 07994 Product specification PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor 003aaa019 (A) 5 4.8 V 4.6 V 4 and 175 Fig 7. Transfer characteristics: drain current as a function of gate-source voltage ...

Page 7

... and 175 Fig 12. Forward transconductance as a function of drain current; typical values. 9397 750 07994 Product specification PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor 003aaa023 I D max (A) typ min 100 140 180 Fig 11. Sub-threshold drain current as a function of gate-source voltage. 003aaa025 ...

Page 8

... and 175 Fig 14. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. 9397 750 07994 Product specification PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor 003aaa027 0.8 1 Fig 15. Gate-source voltage as a function of gate charge; typical values. ...

Page 9

... DIMENSIONS (mm are the original dimensions UNIT A 1 4.5 1.39 0.9 1.3 mm 4.1 1.27 0.7 1.0 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION IEC SOT78 Fig 16. SOT78 9397 750 07994 Product specification PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor mounting scale ...

Page 10

... H D DIMENSIONS (mm are the original dimensions UNIT c 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 OUTLINE VERSION IEC SOT404 2 Fig 17. SOT404 (D -PAK). 9397 750 07994 Product specification PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor 2 scale max. 1.60 10.30 2.90 15. ...

Page 11

... Lotus Manuscript version; August 1999 Rev 1.000 • Front and back page (including address information) added. 02 19990801 - Product specification; second version; supersedes initial version PSMN035-150_SERIES_1 of 1 February 1999 • Lotus Manuscript version; August 1999 Rev 1.000. 01 19990201 - Product specification; initial version • ...

Page 12

... Product specification PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor [1] 13. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury ...

Page 13

... Building BE, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 272 4825 9397 750 07994 Product specification PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399 New Zealand: Tel. + 4160, Fax. + 7811 Norway: Tel. + 8000, Fax. + 8341 Philippines: Tel ...

Page 14

... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 22 February 2001 Document order number: 9397 750 07994 PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor Printed in The Netherlands ...

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