PSMN035-150B,118 NXP Semiconductors, PSMN035-150B,118 Datasheet

MOSFET N-CH 150V 50A SOT404

PSMN035-150B,118

Manufacturer Part Number
PSMN035-150B,118
Description
MOSFET N-CH 150V 50A SOT404
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PSMN035-150B,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
250W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
79nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
50A
Drain To Source Voltage (vdss)
150V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.035 Ohm @ 10 V
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
50 A
Power Dissipation
250000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055717118::PSMN035-150B /T3::PSMN035-150B /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
Table 1.
Symbol Parameter
V
I
P
Dynamic characteristics
Q
Static characteristics
R
D
DS
tot
GD
DSon
Low conduction losses due to low
on-state resistance
Switched-mode power supplies
PSMN035-150B
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 04 — 17 November 2009
drain-source voltage T
drain current
total power
dissipation
gate-drain charge
drain-source
on-state resistance
Quick reference
Conditions
T
and
T
V
V
see
V
T
and
j
mb
mb
j
GS
DS
GS
≥ 25 °C; T
= 25 °C; see
Figure 13
= 25 °C; see
2
= 25 °C; see
12
= 120 V; T
= 10 V; I
= 10 V; I
j
D
D
≤ 175 °C
= 50 A;
= 25 A;
j
Figure 11
= 25 °C;
Figure 1
Figure 3
Suitable for high frequency
applications due to fast switching
characteristics
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
33
30
Max
150
50
250
45
35
Unit
V
A
W
nC
mΩ

Related parts for PSMN035-150B,118

PSMN035-150B,118 Summary of contents

Page 1

... PSMN035-150B N-channel TrenchMOS SiliconMAX standard level FET Rev. 04 — 17 November 2009 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...

Page 2

... Figure °C mb ≤ 10 µs; pulsed ° ° j(init Ω; see unclamped 0.1 ms ≤ °C; sup GS j(init Ω; unclamped; see R Figure 4 GS Rev. 04 — 17 November 2009 PSMN035-150B Graphic symbol mbb076 Version SOT404 Min Max - 150 - 150 - Figure 2 - 200 - 250 -55 175 -55 175 - 50 ...

Page 3

... T (°C) mb Fig 2. Safe operating area; continuous and peak drain currents as a function of drain-source volt 03aa16 ( −3 150 200 10 T (°C) mb Fig 4. Non-repetitive avalanche ruggedness current as a function of pulse duration Rev. 04 — 17 November 2009 PSMN035-150B 003aaa016 = DSon μ 100 μ D. 100 ...

Page 4

... Transient thermal impedance from junction to solder point as a function of pulse duration PSMN035-150B_4 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Conditions see Figure 5 mounted on printed-circuit board; minimum footprint Single Pulse −5 −4 − Rev. 04 — 17 November 2009 PSMN035-150B Min Typ Max - 0 003aaa018 t p δ ...

Page 5

... Figure MHz °C; see Figure MHz °C; see Figure 1.5 Ω 5.6 Ω °C G(ext ° see Figure /dt = -100 A/µ ° Rev. 04 — 17 November 2009 PSMN035-150B Min Typ Max Unit 150 - - 0.05 10 µ 500 µ 100 100 mΩ mΩ 4720 ...

Page 6

... DS Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aaa024 ( max (V) GS Fig 9. Forward transconductance as a function of drain current; typical values Rev. 04 — 17 November 2009 PSMN035-150B 003aaa020 × R > DSon 175 ° ° (V) GS 003aaa025 = 25 ° 175 ° ...

Page 7

... T (°C) j Fig 11. Drain-source on-state resistance as a function of drain current; typical values 003aaa022 ( 120 160 0 T (°C) j Fig 13. Gate-source voltage as a function of gate charge; typical values Rev. 04 — 17 November 2009 PSMN035-150B 003aaa021 4.6 V 4.8 V 5.0 V 5.2 V 5 (A) D 003aaa028 = ° 120 V ...

Page 8

... N-channel TrenchMOS SiliconMAX standard level FET 003aaa026 50 45 Ciss Coss Crss (V) DS Fig 15. Source current as a function of source-drain voltage; typical values Rev. 04 — 17 November 2009 PSMN035-150B 003aaa027 = 175 ° ° 0.2 0.4 0.6 0.8 1.0 1.2 V (V) SD © NXP B.V. 2009. All rights reserved ...

Page 9

... N-channel TrenchMOS SiliconMAX standard level FET 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 04 — 17 November 2009 PSMN035-150B mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2009. All rights reserved. SOT404 ...

Page 10

... Product data sheet - The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number PSMN035-150B separated from data sheet PSMN035-150_SERIES_HG_3. Product specification - Product specification ...

Page 11

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 04 — 17 November 2009 PSMN035-150B © NXP B.V. 2009. All rights reserved ...

Page 12

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 17 November 2009 Document identifier: PSMN035-150B_4 ...

Related keywords