RCX120N25 Rohm Semiconductor, RCX120N25 Datasheet

MOSFET N-CH 250V 12A TO-220FM

RCX120N25

Manufacturer Part Number
RCX120N25
Description
MOSFET N-CH 250V 12A TO-220FM
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of RCX120N25

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
12A
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220FM-3 (Straight Leads)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
250 V
Continuous Drain Current
12 A
Power Dissipation
40 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Vgs(th) (max) @ Id
-
Rds On (max) @ Id, Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Silicon N-channel MOSFET
1) Low on-resistance.
2) High speed switching.
3) Gate-source voltage V
4) High Power Package (TO-220FM).
Switching
RCX120N25
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Avalanche current
Avalanche energy
Power dissipation(Tc=25C)
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 L
*3 Limited only by maximum channel temperature allowed.
Channel to Case
* T
 Structure
Features
 Application
 Packaging specifications
 Absolute maximum ratings (Ta = 25C)
 Thermal resistance
10V Drive Nch MOSFET
C
RCX120N25
Type
=25C
500H, V
Parameter
Parameter
Package
Code
Basic ordering unit (pieces)
DD
=50V, R
G
=25T
Continuous
Continuous
Pulsed
Pulsed
GSS
ch
=25C
garanteed to be ±30V
Rth (ch-c)
Symbol
Symbol
V
Bulk
V
Tstg
500
Tch
E
I
I
I
P
GSS
I
I
DSS
DP
SP
AS
-
D
S
AS
D
*3
*1
*3
*2
*2
*1
*
55 to 150
Limits
Limits
3.125
10.5
250
30
12
48
150
12
48
40
6
1/6
C / W
Unit
Unit
mJ
C
C
W
V
V
A
A
A
A
A
 Dimensions (Unit : mm)
 Inner circuit
TO-220FM
(1) Gate
(2) Drain
(3) Souce
2.54
1.3
(1)
1 BODY DIODE
(1)
10.0
(2) (3)
1.2
2.54
0.8
(2)
φ 3.2
Data Sheet
0.75
∗1
2011.10 - Rev.A
4.5
(3)
2.8
2.6

Related parts for RCX120N25

RCX120N25 Summary of contents

Page 1

... GSS 4) High Power Package (TO-220FM).  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RCX120N25  Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Gate-source voltage Continuous Drain current Pulsed Source current Continuous (Body Diode) ...

Page 2

... RCX120N25  Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current I Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance l Y Input capacitance C Output capacitance C Reverse transfer capacitance C Turn-on delay time ...

Page 3

... RCX120N25 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ =25°C a Pulsed V =10. =8. Drain-Source Voltage : V Fig.3 Typical Transfer Characteristics 100 V =10V DS pulsed 10 T =125° =75° =25° =-25°C a 0.1 0.01 0.001 0.0001 0.00001 Gate-Source Voltage : V Fig.5 Static Drain-Source On-State Resistance vs. Drain Current ...

Page 4

... RCX120N25 Fig.7 Forward Transfer Admittance vs. Drain Current 100 V =10V DS pulsed 0.1 T 0.01 0.01 0.1 1 Drain Current : I Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 0.4 T =25°C a Pulsed 0 =6.0A D 0.2 0 Gate-Source Voltage : V Fig.11 Dynamic Input Characteristics 15 T =25° =125V DD I =12A D Pulsed ...

Page 5

... RCX120N25 Fig.13 Reverse Recovery Time vs. Source Current 1000 T =25° =0V gs di/dt=100A/us Pulsed 100 Source Current : I Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 T =25°C a Single Pulse 1 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. ...

Page 6

... RCX120N25  Measurement circuits D.U. Fig.1-1 Switching Time Measurement Circuit D.U.T. I G(Const Fig.2-1 Gate Charge Measurement Circuit D.U. Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Pulse width 90% 50% 10 10% 90 d(on) d(off Fig.1-2 Switching Waveforms Charge Fig.2-2 Gate Charge Waveform ...

Page 7

ROHM Co., Ltd. All rights reserved Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ Notice ...

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