BUK9107-55ATE,118 NXP Semiconductors, BUK9107-55ATE,118 Datasheet

BUK9107-55ATE,118

Manufacturer Part Number

BUK9107-55ATE,118

Description

MOSFET N-CH 55V 75A D2PAK

Manufacturer

NXP Semiconductors

Series

TrenchMOS™r

Datasheet

1.BUK9107-55ATE118.pdf (17 pages)

Specifications of BUK9107-55ATE,118

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Diode (Isolated)

Rds On (max) @ Id, Vgs

6.2 mOhm @ 50A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

75A

Vgs(th) (max) @ Id

2V @ 1mA

Gate Charge (qg) @ Vgs

108nC @ 5V

Input Capacitance (ciss) @ Vds

5836pF @ 25V

Power - Max

272W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (4 leads + tab)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0062 Ohms

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

15 V

Continuous Drain Current

140 A

Power Dissipation

272 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

934056982118
BUK9107-55ATE /T3
BUK9107-55ATE /T3

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1. Description

2. Features

3. Applications

4. Pinning information

Table 1:

Description

gate (g)

anode (a)

drain (d)

cathode (k)

source (s)

mounting base;

connected to drain (d)

Pinning - SOT426 and SOT263B simpliﬁed outline and symbol

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

TrenchMOS™ technology, featuring very low on state resistance and TrenchPLUS

diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature

sensing.

Product availability:

BUK9107-55ATE in SOT426 (D

BUK9907-55ATE in SOT263B.

Simpliﬁed outline

BUK91/9907-55ATE

TrenchPLUS logic level FET

Rev. 01 — 7 February 2002

Typical on-state resistance 5.8 m

Q101 compliant

ESD protection

Monolithically integrated temperature sensor for overload protection.

Automotive and power switching:

Front view

1 2

12 V and 24 V high power motor drives (e.g. Electrical Power Assisted

Steering (EPAS))

Protected drive for lamps.

SOT426 (D

-PAK)

MBK127

-PAK)

SOT263B

MBL263

Symbol

MBL317

Product data

Related parts for BUK9107-55ATE,118

BUK9107-55ATE,118 Summary of contents

Page 1

... N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on state resistance and TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. Product availability: BUK9107-55ATE in SOT426 (D BUK9907-55ATE in SOT263B. 2. Features Typical on-state resistance 5.8 m Q101 compliant ESD protection Monolithically integrated temperature sensor for overload protection ...

Page 2

Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon V temperature sense ...

Page 3

Philips Semiconductors 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage (DC drain-gate voltage (DC) DGS V gate-source voltage (DC drain current (DC) ...

Page 4

Philips Semiconductors 120 P der (%) 100 P tot P = ---------------------- - 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of mounting base temperature ...

Page 5

Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-a) ambient R thermal resistance from junction to th(j-mb) mounting base 7.1 Transient thermal impedance ...

Page 6

Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise speciﬁed. j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage I GS(th) I drain-source leakage current DSS V gate-source breakdown (BR)GSS voltage ...

Page 7

Philips Semiconductors Table 5: Characteristics …continued unless otherwise speciﬁed. j Symbol Parameter L internal drain inductance d L internal source inductance s Source-drain diode V source-drain (diode forward) SD voltage t reverse recovery time rr Q ...

Page 8

Philips Semiconductors 400 (A) 4.4 350 6 300 10 250 200 150 100 300 Fig 5. Output ...

Page 9

Philips Semiconductors 2.5 V GS(th) (V) max 2 typ 1.5 min 1 0.5 0 - Fig 9. Gate-source threshold voltage as a function of junction temperature. 140 ...

Page 10

Philips Semiconductors 100 0.0 1.0 2 Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 700 V F (mV) 600 500 400 ...

Page 11

Philips Semiconductors Fig 17. Reverse diode current as a function of reverse diode voltage; typical values. 9397 750 09138 Product data 03ne88 100 175 º ...

Page 12

Philips Semiconductors 9. Package outline Plastic single-ended surface mounted package (Philips version of D (one lead cropped DIMENSIONS (mm are the original dimensions UNIT b c 4.50 1.40 0.85 0.64 ...

Page 13

Philips Semiconductors Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 DIMENSIONS (mm are the original dimensions UNIT 4.5 1.39 0.85 0.7 15.8 mm 4.1 1.27 0.70 0.4 15.2 Notes ...

Page 14

Philips Semiconductors 10. Soldering handbook, full pagewidth 8.35 8.15 4.85 7.95 Dimensions in mm. Fig 20. Reﬂow soldering footprint for SOT426. 9397 750 09138 Product data 10.85 10.60 10.50 1.50 7.50 7.40 2.15 2.25 1.50 4.60 0.30 3.00 solder lands ...

Page 15

Philips Semiconductors 11. Revision history Table 6: Revision history Rev Date CPCN Description 01 20020207 - Product speciﬁcation; initial version 9397 750 09138 Product data BUK91/9907-55ATE Rev. 01 — 7 February 2002 TrenchPLUS logic level FET © Koninklijke Philips Electronics ...

Page 16

Philips Semiconductors Philips Semiconductors 12. Data sheet status [1] [2] Data sheet status Product status Objective data Development Preliminary data Qualiﬁcation Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] ...

Page 17

Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . ...

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