BUK7909-75ATE,127 NXP Semiconductors, BUK7909-75ATE,127 Datasheet
BUK7909-75ATE,127
Specifications of BUK7909-75ATE,127
BUK7909-75ATE
BUK7909-75ATE
Related parts for BUK7909-75ATE,127
BUK7909-75ATE,127 Summary of contents
Page 1
... BUK7909-75ATE N-channel TrenchPLUS standard level FET Rev. 02 — 16 February 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...
Page 2
... BUK7909-75ATE TO-220 plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 BUK7909-75ATE_2 Product data sheet N-channel TrenchPLUS standard level FET Simplified outline SOT263B (TO-220) Rev. 02 — 16 February 2009 BUK7909-75ATE Graphic symbol mbl317 Version SOT263B © NXP B.V. 2009. All rights reserved ...
Page 3
... ° °C; see Figure 1 mb continuous = 5 ms; δ = 0.01 pulsed °C; mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped j(init) HBM 100 pF 1.5 kΩ Rev. 02 — 16 February 2009 BUK7909-75ATE Min Max - - [1] - 120 [ [ Figure 3 - 480 - 272 - -100 100 -55 175 ...
Page 4
... Capped due to package 40 0 150 200 0 T (°C) mb Fig 2. Continuous drain current as a function of mounting base temperature 100 μ Rev. 02 — 16 February 2009 BUK7909-75ATE 03ni95 50 100 150 200 T mb (°C) 03ni96 μ 100 (V) © NXP B.V. 2009. All rights reserved ...
Page 5
... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7909-75ATE_2 Product data sheet N-channel TrenchPLUS standard level FET Conditions vertical in still air see Figure Rev. 02 — 16 February 2009 BUK7909-75ATE Min Typ Max Unit - 0.55 K/W 03ni64 t p δ ...
Page 6
... Figure 7; see Figure 250 µ ° ≥ -55 °C; T ≤ 175 ° 250 µ > 125 µA; I < 250 µ ° °C; see Figure MHz °C; see Figure 12 j Rev. 02 — 16 February 2009 BUK7909-75ATE Min Typ Max Unit 4 0.1 10 µ 250 µ 1000 ...
Page 7
... G(ext) j measured from upper edge of drain mounting base to centre of die °C j measured from source lead to source bond pad ° ° see Figure /dt = -100 A/µ - ° Rev. 02 — 16 February 2009 BUK7909-75ATE Min Typ Max Unit - 108 - ns - 185 - ns - 100 - 0.85 1.2 V ...
Page 8
... −60 300 400 I D (A) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature Rev. 02 — 16 February 2009 BUK7909-75ATE N-channel TrenchPLUS standard level FET 03ni82 (V) 03nb25 0 60 120 T (°C) j © NXP B.V. 2009. All rights reserved. 20 180 ...
Page 9
... Fig 10. Sub-threshold drain current as a function of gate-source voltage 03ni83 8000 C (pF) 6000 4000 2000 100 I D (A) Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 16 February 2009 BUK7909-75ATE 03aa35 min typ max (V) GS 03ni97 C iss C rss C oss ...
Page 10
... S F (mV/K) −1.60 −1.50 −1.40 150 200 645 T (°C) j Fig 16. Temperature coefficient of temperature sense diode as a function of forward voltage; typical values Rev. 02 — 16 February 2009 BUK7909-75ATE 03ni92 100 150 Q G (nC) 03ne85 max typ min 655 665 675 V (mV) F © NXP B.V. 2009. All rights reserved. ...
Page 11
... Fig 17. Reverse diode current as a function of reverse diode voltage; typical values BUK7909-75ATE_2 Product data sheet N-channel TrenchPLUS standard level FET 100 175 ° °C 0 0.0 0.4 0.8 1 (V) Rev. 02 — 16 February 2009 BUK7909-75ATE 03ni85 1.6 © NXP B.V. 2009. All rights reserved ...
Page 12
... 15.8 6.4 10.3 15.0 2.4 1.7 15.2 5.9 9.7 13.5 1.6 REFERENCES JEDEC EIAJ 5-lead TO-220 Rev. 02 — 16 February 2009 BUK7909-75ATE N-channel TrenchPLUS standard level FET mounting base Q c (2) ∅ 0.8 3.8 4.3 3.0 2.6 0.5 0.6 3.6 4.1 2.7 2.2 ...
Page 13
... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7909-75ATE separated from data sheet BUK71_7909_75ATE-01. BUK71_7909_75ATE-01 20020812 (9397 750 09878) BUK7909-75ATE_2 ...
Page 14
... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 16 February 2009 BUK7909-75ATE © NXP B.V. 2009. All rights reserved ...
Page 15
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 16 February 2009 Document identifier: BUK7909-75ATE_2 All rights reserved. ...