APT5024BVRG Microsemi Power Products Group, APT5024BVRG Datasheet
APT5024BVRG
Specifications of APT5024BVRG
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APT5024BVRG Summary of contents
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POWER MOS V Power MOS V ® new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching ...
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DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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V GS =7V, 10V & 15V 5. 4. 100 150 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS -55° > ...
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OPERATION HERE LIMITED (ON =+25° =+150°C SINGLE PULSE . 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 20 ...