APT30M85BVRG Microsemi Power Products Group, APT30M85BVRG Datasheet

MOSFET N-CH 300V 40A TO-247

APT30M85BVRG

Manufacturer Part Number
APT30M85BVRG
Description
MOSFET N-CH 300V 40A TO-247
Manufacturer
Microsemi Power Products Group
Series
POWER MOS V®r
Datasheet

Specifications of APT30M85BVRG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
85 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
195nC @ 10V
Input Capacitance (ciss) @ Vds
4950pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT30M85BVRG
Manufacturer:
HD
Quantity:
20 000
Power MOS V
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• Lower Leakage
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
Symbol
Symbol
T
R
BV
V
V
V
J
I
I
I
V
E
E
DS(on)
D(on)
GS(th)
I
,T
I
DSS
GSS
P
GSM
T
DSS
DM
I
AR
GS
AR
AS
D
DSS
D
STG
L
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of high voltage N-Channel enhancement
POWER MOS V
1
1
(Repetitive and Non-Repetitive)
2
(V
DS
C
DS
APT Website - http://www.advancedpower.com
1
= V
C
= 25 C
• Popular TO-247 Package
• 100% Avalanche Tested
= 25 C
> I
4
GS
GS
D(on)
2
DS
DS
, I
GS
= 30V, V
Bend, Oregon 97702-1035
F-33700 Merignac - France
D
(V
= V
= 0.8 V
x R
= 0V, I
= 1.0mA)
GS
DSS
DS(on)
= 10V, 0.5 I
, V
DSS
D
DS
= 250 A)
GS
Max, V
= 0V)
®
, V
= 0V)
GS
D[Cont.]
= 0V, T
GS
All Ratings: T
= 10V)
)
C
= 125 C)
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
APT30M85BVR
300V 40A 0.085
C
®
= 25 C unless otherwise specified.
MIN
300
40
2
APT30M85BVR
-55 to 150
1300
TYP
300
160
300
300
2.4
40
40
30
30
40
G
TO-247
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
0.085
MAX
250
25
100
4
D
S
Amps
Watts
Amps
Amps
Ohms
UNIT
W/ C
UNIT
Volts
Volts
Volts
Volts
mJ
nA
C
A

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APT30M85BVRG Summary of contents

Page 1

POWER MOS V ® Power MOS new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching ...

Page 2

DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller ") Charge gd t Turn-on Delay Time d(on) t Rise ...

Page 3

APT30M85BVR =6V, 7V, 10V & 15V DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS -55 C ...

Page 4

OPERATION HERE 100 LIMITED (ON =+ =+150 C SINGLE PULSE . DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING ...

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