APT5010B2VRG Microsemi Power Products Group, APT5010B2VRG Datasheet

APT5010B2VRG

Manufacturer Part Number

APT5010B2VRG

Description

MOSFET N-CH 500V 47A T-MAX

Manufacturer

Microsemi Power Products Group

Series

POWER MOS V®r

Datasheet

1.APT5010B2VRG.pdf (4 pages)

Specifications of APT5010B2VRG

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

100 mOhm @ 500mA, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

47A

Vgs(th) (max) @ Id

4V @ 2.5mA

Gate Charge (qg) @ Vgs

470nC @ 10V

Input Capacitance (ciss) @ Vds

8900pF @ 25V

Power - Max

520W

Mounting Type

Through Hole

Package / Case

T-MAX

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Power MOS V

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Faster Switching

• Lower Leakage

MAXIMUM RATINGS

STATIC ELECTRICAL CHARACTERISTICS

USA

405 S.W. Columbia Street

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord

Symbol

DS(on)

D(on)

GS(th)

DSS

GSS

GSM

DSS

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

On State Drain Current

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

is a new generation of high voltage N-Channel enhancement

POWER MOS V

(Repetitive and Non-Repetitive)

APT Website - http://www.advancedpower.com

= V

= 25 C

• 100% Avalanche Tested

• New T-MAX™ Package

= 25 C

> I

(Clip-mounted TO-247 Package)

D(on)

, I

= 30V, V

Bend, Oregon 97702-1035

F-33700 Merignac - France

= V

= 0.8 V

x R

= 0V, I

= 2.5mA)

DSS

DS(on)

= 10V, 0.5 I

, V

DSS

= 250 A)

Max, V

= 0V)

, V

= 0V)

D[Cont.]

= 0V, T

All Ratings: T

= 10V)

)

= 125 C)

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

500V 47A 0.100

APT5010B2VR

= 25 C unless otherwise specified.

MIN

500

APT5010B2VR

-55 to 150

2500

4.16

TYP

500

188

520

300

T-MAX™

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

0.100

MAX

250

100

Amps

Watts

Amps

Ohms

UNIT

W/ C

UNIT

Volts

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APT5010B2VRG Summary of contents

Page 1

POWER MOS V ® Power MOS new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching ...

Page 2

DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller ") Charge gd t Turn-on Delay Time d(on) t Rise ...

Page 3

APT5010B2VR 100 V GS =7V, 8V, 10V & 15V 100 150 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 -55 C ...

Page 4

OPERATION HERE 100 LIMITED (ON =+ =+150 C SINGLE PULSE . 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE ...

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