APT6017LLLG Microsemi Power Products Group, APT6017LLLG Datasheet

APT6017LLLG

Manufacturer Part Number

APT6017LLLG

Description

MOSFET N-CH 600V 35A TO-264

Manufacturer

Microsemi Power Products Group

Series

POWER MOS 7®r

Datasheet

1.APT6017B2LLG.pdf (5 pages)

Specifications of APT6017LLLG

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

170 mOhm @ 17.5A, 10V

Drain To Source Voltage (vdss)

600V

Current - Continuous Drain (id) @ 25° C

35A

Vgs(th) (max) @ Id

5V @ 2.5mA

Gate Charge (qg) @ Vgs

100nC @ 10V

Input Capacitance (ciss) @ Vds

4500pF @ 25V

Power - Max

500W

Mounting Type

Through Hole

Package / Case

TO-264

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Power MOS 7

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7

and Q

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

STATIC ELECTRICAL CHARACTERISTICS

MAXIMUM RATINGS

Symbol

DS(on)

GS(th)

DSS

GSS

GSM

DSS

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

. Power MOS 7

POWER MOS 7

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

is a new generation of low loss, high voltage, N-Channel

combines lower conduction and switching losses

(Repetitive and Non-Repetitive)

• Increased Power Dissipation

• Easier To Drive

• Popular

APT Website - http://www.advancedpower.com

= V

= 25°C

, I

= ±30V, V

by significantly lowering R

T-MAX™

= 480V, V

= 600V, V

= 2.5mA)

= 0V, I

MOSFET

= 10V, I

= 250µA)

= 0V)

or TO-264 Package

= 0V, T

= 0V)

= 17.5A)

All Ratings: T

= 125°C)

DS(ON)

600V 35A 0.170

= 25°C unless otherwise specified.

APT6017LLL

MIN

600

APT6017B2LL_LLL

B2LL

T-MAX™

-55 to 150

1600

TYP

600

140

±30

±40

500

300

4.0

0.170

±100

MAX

100

500

TO-264

LLL

Ohms

Amps

Watts

Amps

UNIT

Volts

W/°C

UNIT

Volts

µA

°C

Ω Ω Ω Ω Ω

Related parts for APT6017LLLG

APT6017LLLG Summary of contents

Page 1

POWER MOS 7 ® Power MOS new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 ® and Q . Power MOS 7 combines ...

Page 2

DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller ") Charge gd t Turn-on Delay Time d(on) t Rise ...

Page 3

RC MODEL Junction temp. (°C) 0.0230 Power 0.108 (watts) 0.111 Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 160 V DS > (ON (ON)MAX. 140 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE ...

Page 4

OPERATION HERE LIMITED (ON =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 35A D 12 ...

Page 5

Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions APT30DF60 D.U.T. Figure 20, Inductive Switching Test Circuit T-MAX (B2) Package Outline TM 4.69 (.185) ...

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