MOSFET N-CH 600V 38A T-MAX

APT6015B2VRG

Manufacturer Part NumberAPT6015B2VRG
DescriptionMOSFET N-CH 600V 38A T-MAX
ManufacturerMicrosemi Power Products Group
SeriesPOWER MOS V®
APT6015B2VRG datasheet
 


Specifications of APT6015B2VRG

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs150 mOhm @ 500mA, 10VDrain To Source Voltage (vdss)600V
Current - Continuous Drain (id) @ 25° C38AVgs(th) (max) @ Id4V @ 2.5mA
Gate Charge (qg) @ Vgs475nC @ 10VInput Capacitance (ciss) @ Vds9000pF @ 25V
Power - Max520WMounting TypeThrough Hole
Package / CaseT-MAXLead Free Status / RoHS StatusLead free / RoHS Compliant
1
Page 1
2
Page 2
3
Page 3
4
Page 4
Page 1/4

Download datasheet (61Kb)Embed
Next
POWER MOS V
®
Power MOS V
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• Lower Leakage
MAXIMUM RATINGS
Symbol
Parameter
V
Drain-Source Voltage
DSS
I
Continuous Drain Current @ T
D
1
I
Pulsed Drain Current
DM
V
Gate-Source Voltage Continuous
GS
V
Gate-Source Voltage Transient
GSM
Total Power Dissipation @ T
P
D
Linear Derating Factor
T
,T
Operating and Storage Junction Temperature Range
J
STG
T
Lead Temperature: 0.063" from Case for 10 Sec.
L
1
I
Avalanche Current
(Repetitive and Non-Repetitive)
AR
E
Repetitive Avalanche Energy
AR
E
Single Pulse Avalanche Energy
AS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
BV
Drain-Source Breakdown Voltage (V
DSS
2
I
On State Drain Current
D(on)
R
Drain-Source On-State Resistance
DS(on)
Zero Gate Voltage Drain Current (V
I
DSS
Zero Gate Voltage Drain Current (V
I
Gate-Source Leakage Current (V
GSS
V
Gate Threshold Voltage (V
GS(th)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
®
• 100% Avalanche Tested
• New T-MAX™ Package
(Clip-mounted TO-247 Package)
All Ratings: T
= 25 C
C
= 25 C
C
1
4
= 0V, I
= 250 A)
GS
D
(V
> I
x R
Max, V
= 10V)
DS
D(on)
DS(on)
GS
2
(V
= 10V, 0.5 I
)
GS
D[Cont.]
= V
, V
= 0V)
DS
DSS
GS
= 0.8 V
, V
= 0V, T
DS
DSS
GS
C
= 30V, V
= 0V)
GS
DS
= V
, I
= 2.5mA)
DS
GS
D
APT Website - http://www.advancedpower.com
Bend, Oregon 97702-1035
F-33700 Merignac - France
APT6015B2VR
600V
38A 0.150
T-MAX™
®
D
G
S
= 25 C unless otherwise specified.
C
APT6015B2VR
600
38
152
30
40
520
4.16
-55 to 150
300
38
50
2500
MIN
TYP
MAX
600
38
0.150
25
= 125 C)
250
100
2
4
Phone: (541) 382-802 8
FAX: (541) 388-036 4
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
UNIT
Volts
Amps
Volts
Watts
W/ C
C
Amps
mJ
UNIT
Volts
Amps
Ohms
A
nA
Volts

APT6015B2VRG Summary of contents

  • Page 1

    POWER MOS V ® Power MOS new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching ...

  • Page 2

    DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller ") Charge gd t Turn-on Delay Time d(on) t Rise ...

  • Page 3

    APT6015B2VR 100 V GS =6V, 7V, 10V & 15V 100 150 200 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 - +25 ...

  • Page 4

    OPERATION HERE 100 LIMITED (ON =+ =+150 C SINGLE PULSE . 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE ...