APT6015B2VRG Microsemi Power Products Group, APT6015B2VRG Datasheet - Page 3

• Manufacturer Part Number: APT6015B2VRG
• Description: MOSFET N-CH 600V 38A T-MAX
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT6015B2VRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 475nC @ 10V
• Input Capacitance (ciss) @ Vds: 9000pF @ 25V
• Power - Max: 520W
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
100
100
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
80
60
40
20
40
30
20
10
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
0
0
-50
25
V
0
0
V
APT6015B2VR
DS
GS
V DS > I D (ON) x R DS (ON)MAX.
I
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, GATE-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
@ < 0.5 % DUTY CYCLE
-25
T
250 SEC. PULSE TEST
V
GS
J
50
T
, JUNCTION TEMPERATURE ( C)
T J = +125 C
V GS =6V, 7V, 10V & 15V
50
T J = +25 C
C
= 10V
D
, CASE TEMPERATURE ( C)
[Cont.]
2
0
100
T J = +125 C
T J = +25 C
25
T J = -55 C
75
150
50
4
100
75
200
T J = -55 C
100 125 150
6
125
250
5.5V
4.5V
4V
5V
150
300
8
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
100
1.6
1.4
1.2
1.0
0.8
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
-50
-50
V
0
0
DS
FIGURE 5, R
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS
-25
T
-25
I
V GS =6V, 7V, 10V & 15V
J
D
= 10V @ 0.5 I
NORMALIZED TO
, JUNCTION TEMPERATURE ( C)
T
, DRAIN CURRENT (AMPERES)
20
C
4
, CASE TEMPERATURE ( C)
0
0
V GS =10V
DS
25
25
40
(ON) vs DRAIN CURRENT
D
8
[Cont.]
50
50
12
60
75
75 100 125 150
V GS =20V
100 125 150
16
80
5.5V
4.5V
4V
5V
100
20