APT6015B2VRG Microsemi Power Products Group, APT6015B2VRG Datasheet - Page 4

• Manufacturer Part Number: APT6015B2VRG
• Description: MOSFET N-CH 600V 38A T-MAX
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT6015B2VRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 475nC @ 10V
• Input Capacitance (ciss) @ Vds: 9000pF @ 25V
• Power - Max: 520W
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

APT's devices are covered by one or more of the following U.S.patents: 4,895,810
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
200
100
50
10
20
16
12
.5
.1
FIGURE 10, MAXIMUM SAFE OPERATING AREA
5
1
8
4
0
V
1
0
DS
I
D
T C =+25 C
T J =+150 C
SINGLE PULSE
LIMITED BY R DS (ON)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= I
OPERATION HERE
D
100
Q
[Cont.]
g
, TOTAL GATE CHARGE (nC)
5
200
10
V DS =300V
V DS =120V
300
50 100
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
V DS =480V
400
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
500
Dimensions in Millimeters and (Inches)
T-MAX™ Package Outline
600
600
5,256,583
10 S
100 S
1mS
10mS
100mS
DC
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
5,045,903
4,748,103
4.50 (.177) Max.
1.01 (.040)
1.40 (.055)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
5.45 (.215) BSC
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
5,089,434
5,283,202
2-Plcs.
30,000
10,000
5,000
1,000
500
100
200
100
50
10
5
1
.01
5,182,234
5,231,474
V
V
0
DS
SD
5
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
15.49 (.610)
16.26 (.640)
0.4
T J =+150 C
5,019,522
5,434,095
.1
0.8
5,262,336
5,528,058
1
APT6015B2VR
1.2
T J =+25 C
5.38 (.212)
6.20 (.244)
1.65 (.065)
2.13 (.084)
2.87 (.113)
3.12 (.123)
Gate
Drain
Source
C iss
C oss
C rss
1.6
10
2.0
50