APT20M20B2FLLG Microsemi Power Products Group, APT20M20B2FLLG Datasheet
APT20M20B2FLLG
Manufacturer Part Number
APT20M20B2FLLG
Description
MOSFET N-CH 200V 100A T-MAX
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT20M20B2FLLG.pdf
(5 pages)
Specifications of APT20M20B2FLLG
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
5V @ 2.5mA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
6850pF @ 25V
Power - Max
568W
Mounting Type
Through Hole
Package / Case
T-MAX
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
STATIC ELECTRICAL CHARACTERISTICS
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
Symbol
Symbol
T
R
BV
V
V
V
J
I
V
E
E
DS(on)
I
GS(th)
,T
I
DSS
GSS
P
I
GSM
T
DSS
DM
I
AR
D
GS
AR
AS
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
g
. Power MOS 7
POWER MOS 7
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of low loss, high voltage, N-Channel
®
combines lower conduction and switching losses
1
1
(Repetitive and Non-Repetitive)
• Increased Power Dissipation
• Easier To Drive
• Popular
•
DS
C
APT Website - http://www.advancedpower.com
FAST RECOVERY BODY DIODE
= V
C
= 25°C
1
= 25°C
4
GS
GS
2
DS
, I
DS
®
= ±30V, V
GS
D
(V
= 160V, V
= 200V, V
by significantly lowering R
T-MAX™
R
= 2.5mA)
= 0V, I
5
GS
FREDFET
= 10V, I
D
DS
= 250µA)
GS
GS
= 0V)
or TO-264 Package
= 0V, T
= 0V)
D
= 50A)
All Ratings: T
C
FREDFET
= 125°C)
APT20M20LFLL
DS(ON)
200V 100A 0.020
C
= 25°C unless otherwise specified.
APT20M20B2FLL_LFLL
MIN
200
3
T-MAX™
-55 to 150
2500
4.55
TYP
200
100
400
±30
±40
568
300
100
50
0.020
±100
1000
MAX
250
5
TO-264
G
Ohms
Amps
Amps
Watts
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C
Ω Ω Ω Ω Ω
D
S
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APT20M20B2FLLG Summary of contents
Page 1
POWER MOS 7 ® Power MOS new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 ® and Q . Power MOS 7 combines ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
Page 3
RC MODEL Junction temp. ( ”C) 0.0844 Power (Watts) 0.138 Case temperature FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 200 V DS > (ON DS(ON) MAX. 180 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 160 ...
Page 4
OPERATION HERE LIMITED (ON) 100 =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 75A D V ...
Page 5
Typical Performance Curves 10% t d(on 90 10% Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions APT100S20B D.U.T. Figure 20, Inductive Switching Test Circuit T-MAX (B2) Package Outline ...