APT6015B2VFRG Microsemi Power Products Group, APT6015B2VFRG Datasheet

APT6015B2VFRG

Manufacturer Part Number

APT6015B2VFRG

Description

MOSFET N-CH 600V 38A T-MAX

Manufacturer

Microsemi Power Products Group

Series

POWER MOS V®r

Datasheet

1.APT6015LVFRG.pdf (4 pages)

Specifications of APT6015B2VFRG

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

150 mOhm @ 500mA, 10V

Drain To Source Voltage (vdss)

600V

Current - Continuous Drain (id) @ 25° C

38A

Vgs(th) (max) @ Id

4V @ 2.5mA

Gate Charge (qg) @ Vgs

475nC @ 10V

Input Capacitance (ciss) @ Vds

9000pF @ 25V

Power - Max

520W

Mounting Type

Through Hole

Package / Case

T-MAX

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Power MOS V

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Fast Recovery Body Diode

• Lower Leakage

• Faster Switching

MAXIMUM RATINGS

STATIC ELECTRICAL CHARACTERISTICS

Symbol

D(on)

DS(on)

GS(th)

DSS

GSS

GSM

DSS

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

POWER MOS V

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

On State Drain Current

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

is a new generation of high voltage N-Channel enhancement

(Repetitive and Non-Repetitive)

APT Website - http://www.advancedpower.com

= 25°C

= V

• Avalanche Energy Rated

•

= 25°C

> I

T-MAX™

D(on)

, I

= ±30V, V

= V

= 0.8 V

x R

= 0V, I

= 2.5mA)

DSS

FREDFET

DS(on)

= 10V, 0.5 I

or TO-264 Package

, V

DSS

= 250µA)

Max, V

= 0V)

, V

= 0V)

D[Cont.]

= 0V, T

All Ratings: T

= 10V)

)

= 125°C)

600V 38A

APT6015LVFR

= 25°C unless otherwise specified.

APT6015B2VFR_LVFR

MIN

600

B2VFR

T-MAX™

-55 to 150

2500

4.16

TYP

600

152

±30

±40

520

300

0.150

1000

±100

MAX

250

TO-264

0.150Ω Ω Ω Ω Ω

LVFR

Ohms

Amps

Watts

Amps

UNIT

W/°C

UNIT

Volts

µA

°C

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APT6015B2VFRG Summary of contents

Page 1

POWER MOS V Power MOS new generation of high voltage N-Channel enhancement ® mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching ...

Page 2

DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t (on) Turn-on Delay Time d t Rise ...

Page 3

V GS =6V, 7V, 10V & 15V 100 150 200 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 -55° +25° ...

Page 4

OPERATION HERE 100 LIMITED (ON =+25° =+150°C SINGLE PULSE . 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA ...

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