APT1201R2SFLLG Microsemi Power Products Group, APT1201R2SFLLG Datasheet
APT1201R2SFLLG
Manufacturer Part Number
APT1201R2SFLLG
Description
MOSFET N-CH 1200V 12A D3PAK
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT1201R2BFLLG.pdf
(5 pages)
Specifications of APT1201R2SFLLG
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 6A, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
2540pF @ 25V
Power - Max
403W
Mounting Type
Surface Mount
Package / Case
D³Pak (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
STATIC ELECTRICAL CHARACTERISTICS
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol
Symbol
T
R
V
BV
V
V
J
V
I
I
E
E
DS(on)
GS(th)
,T
I
I
DSS
GSS
GSM
P
DM
T
DSS
AR
I
GS
D
AR
AS
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
g
. Power MOS 7
POWER MOS 7
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of low loss, high voltage, N-Channel
®
combines lower conduction and switching losses
1
1
(Repetitive and Non-Repetitive)
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D
DS
C
APT Website - http://www.advancedpower.com
= V
C
= 25°C
1
= 25°C
4
GS
GS
2
DS
, I
DS
®
= ±30V, V
GS
D
R
(V
= 960V, V
by significantly lowering R
= 1200V, V
= 1mA)
= 0V, I
GS
FREDFET
= 10V, I
D
DS
= 250µA)
GS
= 0V)
GS
= 0V, T
D
= 0V)
= 6A)
All Ratings: T
C
= 125°C)
3
PAK Package
APT1201R2SFLL
1200V 12A 1.200
DS(ON)
C
= 25°C unless otherwise specified.
APT1201R2BFLL_SFLL
1200
MIN
3
BFLL
TO-247
-55 to 150
1200
1300
3.23
TYP
±30
±40
403
300
12
48
12
30
±100
MAX
1000
1.20
250
5
D
G
3
PAK
SFLL
Amps
Amps
Ohms
Watts
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
°C
µA
nA
Ω Ω Ω Ω Ω
D
S
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APT1201R2SFLLG Summary of contents
Page 1
POWER MOS 7 ® Power MOS new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 ® and Q . Power MOS 7 combines ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller ") Charge gd t Turn-on Delay Time d(on) t Rise ...
Page 3
RC MODEL Junction temp. (°C) 0.0258 Power 0.107 (watts) 0.177 Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL > (ON (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 25 ...
Page 4
OPERATION HERE LIMITED (ON =+25° =+150°C SINGLE PULSE . 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 12A D ...
Page 5
Typical Performance Curves 10% t d(on 90% 5% 10% Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions D.U.T. Figure 20, Inductive Switching Test Circuit TO-247 Package Outline (BFLL) 4.69 (.185) 5.31 ...