APT8018L2VRG Microsemi Power Products Group, APT8018L2VRG Datasheet
APT8018L2VRG
Specifications of APT8018L2VRG
Related parts for APT8018L2VRG
APT8018L2VRG Summary of contents
Page 1
POWER MOS V Power MOS new generation of high voltage N-Channel enhancement ® mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
Page 3
RC MODEL Junction temp. (°C) 0.0545 Power (watts) 0.0957 Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 120 V DS > (ON (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 100 80 ...
Page 4
OPERATION HERE LIMITED (ON =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 43A D ...