APT8014L2FLLG Microsemi Power Products Group, APT8014L2FLLG Datasheet
APT8014L2FLLG
Manufacturer Part Number
APT8014L2FLLG
Description
MOSFET N-CH 800V 52A TO-264MAX
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT8014L2FLLG.pdf
(5 pages)
Specifications of APT8014L2FLLG
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 26A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
52A
Vgs(th) (max) @ Id
5V @ 5mA
Gate Charge (qg) @ Vgs
285nC @ 10V
Input Capacitance (ciss) @ Vds
7238pF @ 25V
Power - Max
893W
Mounting Type
Through Hole
Package / Case
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
STATIC ELECTRICAL CHARACTERISTICS
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
along with exceptionally fast switching speeds inherent with Microsemi's
patented metal gate structure.
MAXIMUM RATINGS
Symbol
Symbol
T
R
BV
V
V
V
J
I
V
E
E
DS(on)
I
GS(th)
,T
I
DSS
GSS
P
I
GSM
DSS
DM
T
AR
I
D
GS
AR
AS
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
g
. Power MOS 7
POWER MOS 7
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of low loss, high voltage, N-Channel
®
combines lower conduction and switching losses
1
1
(Repetitive and Non-Repetitive)
• Increased Power Dissipation
• Easier To Drive
• Popular TO-264
•
DS
FAST RECOVERY BODY DIODE
C
= V
= 25°C
1
C
Microsemi Website - http://www.microsemi.com
= 25°C
4
GS
GS
DS
, I
2
DS
®
= ±30V, V
GS
D
= 640V, V
by significantly lowering R
= 800V, V
(V
R
= 5mA)
= 0V, I
GS
FREDFET
= 10V, 26A)
D
DS
= 250µA)
GS
GS
MAX
= 0V)
APT8014L2FLL
= 0V, T
= 0V)
Package
All Ratings: T
C
*
G Denotes RoHS Compliant, Pb Free Terminal Finish.
= 125°C)
DS(ON)
C
= 25°C unless otherwise specified.
MIN
800
3
APT8014L2FLL(G)
APT8014L2FLLG*
-55 to 150
3200
7.14
TYP
±30
±40
800
208
893
300
52
52
50
0.160
1000
±100
MAX
250
5
TO-264
G
Max
Ohms
Amps
Amps
Watts
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C
D
S
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APT8014L2FLLG Summary of contents
Page 1
... 10V, 26A 800V 0V 640V 0V 125° ±30V 0V 5mA Microsemi Website - http://www.microsemi.com APT8014L2FLLG* TO-264 Max DS(ON 25°C unless otherwise specified. C APT8014L2FLL(G) UNIT 800 Volts 52 Amps 208 ±30 Volts ±40 893 Watts W/°C 7.14 -55 to 150 300 Amps 52 50 3200 MIN ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller ") Charge gd t Turn-on Delay Time d(on) t Rise ...
Page 3
0.0509 0.0894 Dissipated Power (Watts) 0.0522 0.988 Z are the external thermal EXT impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 2, TRANSIENT THERMAL IMPEDANCE ...
Page 4
OPERATION HERE LIMITED (ON) 100 =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 52A ...
Page 5
Typical Performance Curves d(on) 90 Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions APT30DF60 D.U.T. Figure 20, Inductive Switching Test Circuit ...