IRF7607TRPBF International Rectifier, IRF7607TRPBF Datasheet

IRF7607TRPBF

Manufacturer Part Number

IRF7607TRPBF

Description

MOSFET N-CH 20V 6.5A MICRO8

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7607TRPBF.pdf (8 pages)

Specifications of IRF7607TRPBF

Package / Case

Micro8™

Mounting Type

Surface Mount

Power - Max

1.8W

Fet Type

MOSFET N-Channel, Metal Oxide

Gate Charge (qg) @ Vgs

22nC @ 5V

Vgs(th) (max) @ Id

1.2V @ 250µA

Current - Continuous Drain (id) @ 25° C

6.5A

Drain To Source Voltage (vdss)

20V

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

30 mOhm @ 6.5A, 4.5V

Transistor Polarity

N Channel

Continuous Drain Current Id

6.5A

Drain Source Voltage Vds

20V

On Resistance Rds(on)

30mohm

Rds(on) Test Voltage Vgs

4.5V

Peak Reflow Compatible (260 C)

Yes

Rohs Compliant

Yes

Resistance Drain-source Rds (on)

30 mOhms

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

12 V

Continuous Drain Current

6.5 A

Power Dissipation

1.8 W

Gate Charge Qg

22 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7607TRPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 8
Download datasheet (145Kb)

Thermal Resistance

Description

New trench HEXFET

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design that HEXFET

power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a wide

variety of applications.

The new Micro8™ package has half the footprint area of the

standard SO-8. This makes the Micro8 an ideal package for

applications where printed circuit board space is at a premium.

The low profile (<1.1mm) of the Micro8 will allow it to fit easily

into extremely thin application environments such as portable

electronics and PCMCIA cards.

www.irf.com

θJA

Low Profile (<1.1mm)

Available in Tape & Reel

Lead-Free

@ T

Trench Technology

N-Channel MOSFET

Ultra Low On-Resistance

Very Small SOIC Package

STG

= 70°C

= 25°C

= 70°C

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

power MOSFETs from International

Parameter

@ 4.5V

Top View

HEXFET

IRF7607PbF

-55 to + 150

Max.

0.014

Micro8™

± 12

6.5

5.2

1.8

1.2

DS(on)

Power MOSFET

DSS

= 0.030Ω

= 20V

PD - 95698

Units

W/°C

°C/W

°C

9/2/04

Related parts for IRF7607TRPBF

IRF7607TRPBF Summary of contents

Page 1

Trench Technology l Ultra Low On-Resistance l N-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Lead-Free l Description ® New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

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IRF7607TRPBF International Rectifier, IRF7607TRPBF Datasheet

IRF7607TRPBF

Specifications of IRF7607TRPBF

Available stocks

Related parts for IRF7607TRPBF

IRF7607TRPBF Summary of contents

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