IRF7524D1TRPBF International Rectifier, IRF7524D1TRPBF Datasheet
IRF7524D1TRPBF
Specifications of IRF7524D1TRPBF
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IRF7524D1TRPBF Summary of contents
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... Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc. ...
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... Max. Forward voltage drop FM I Max. Reverse Leakage current RM C Max. Junction Capacitance t dv/dt Max. Voltage Rate of Charge ( HEXFET is the reg. TM for International Rectifier Power MOSFET 25°C (unless otherwise specified) J Min. Typ. Max. Units Conditions -20 ––– ––– V ...
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VGS TOP -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V 1 0.1 -1.50V 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ...
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IRF7524D1 iss ...
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D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 1.0 0.8 0.6 VGS = -2.5V 0.4 VGS = -5.0V 0.2 0.0 0.0 ...
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IRF7524D1 Schottky Diode Characteristics 0.1 0.0 0.2 0.4 F orwa rd V oltage Forward Voltage Drop - V Fig. 12 -Typical Forward Voltage Drop Characteristics 50° ...
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TM Micro8 Package Details 0.2 5 (.010 0.0 8 ...
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IRF7524D1 TM Micro8 Tape & Reel ...