IRFL024ZTRPBF International Rectifier, IRFL024ZTRPBF Datasheet

IRFL024ZTRPBF

Manufacturer Part Number

IRFL024ZTRPBF

Description

MOSFET N-CH 55V 5.1A SOT223

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRFL024ZPBF.pdf (10 pages)

Specifications of IRFL024ZTRPBF

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Mounting Type

Surface Mount

Power - Max

Fet Type

MOSFET N-Channel, Metal Oxide

Gate Charge (qg) @ Vgs

14nC @ 10V

Vgs(th) (max) @ Id

4V @ 250µA

Current - Continuous Drain (id) @ 25° C

5.1A

Drain To Source Voltage (vdss)

55V

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

57.5 mOhm @ 3.1A, 10V

Transistor Polarity

N Channel

Continuous Drain Current Id

5.1A

Drain Source Voltage Vds

55V

On Resistance Rds(on)

57.5mohm

Rds(on) Test Voltage Vgs

10V

Peak Reflow Compatible (260 C)

Yes

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

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Part Number

Manufacturer

Quantity

Price

Company:

BOSTOCK HK LIMITED

Part Number:

IRFL024ZTRPBF

Manufacturer:

Quantity:

8 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFL024ZTRPBF

Manufacturer:

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

IRFL024ZTRPBF

Company:

H&T Electronics

Part Number:

IRFL024ZTRPBF

Quantity:

8 000

Company:

H&T Electronics

Part Number:

IRFL024ZTRPBF

Quantity:

10 000

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Features

Description

This HEXFET

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of

this design are a 150°C junction operating temperature,

fast switching speed and improved repetitive

avalanche rating . These features combine to make

this design an extremely efficient and reliable device

for use in a wide variety of applications.

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

STG

AS (Thermally limited)

@ T

Advanced Process Technology

Ultra Low On-Resistance

150°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

(Tested )

= 25°C

= 70°C

= 25°C Power Dissipation

Continuous Drain Current, V

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Junction-to-Ambient (PCB mount, steady state)

Power MOSFET utilizes the latest

Ã™

™

Parameter

@ 10V

(Silicon Limited)

IRFL024ZPbF

HEXFET

Typ.

See Fig.12a, 12b, 15, 16

–––

-55 to + 150

Max.

0.02

± 20

5.1

4.1

2.8

1.0

DS(on)

Power MOSFET

DSS

Max.

120

SOT-223

= 5.1A

= 57.5m

PD - 95312A

= 55V

Units

W/°C

°C/W

°C

Related parts for IRFL024ZTRPBF

IRFL024ZTRPBF Summary of contents

Page 1

Features Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Description ® This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 4.5V 30µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150°C 10 ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 1000 C iss C oss 100 ...

Page 5

T A ,Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE ( THERMAL ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 1 0.01 0.05 0.10 0.1 0.01 1.0E-05 1.0E-04 Fig 15. Typical Avalanche Current vs.Pulsewidth 14 TOP Single Pulse BOTTOM 1% Duty Cycle 3. ...

Page 8

D.U.T + ƒ ‚ - SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 9

HEXFET PRODUCT MARKING THIS IS AN IRFL014 INT ERNAT IONAL RECTIF IER LOGO Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com ...

Page 10

TR FEED DIRECTION 12.10 (.475) 11.90 (.469) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 13.20 (.519) 12.80 (.504) 330.00 (13.000) MAX. NOTES ...

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