IRFL024NTRPBF International Rectifier, IRFL024NTRPBF Datasheet

IRFL024NTRPBF

Manufacturer Part Number

IRFL024NTRPBF

Description

MOSFET N-CH 55V 2.8A SOT223

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRFL024NTRPBF.pdf (8 pages)

Specifications of IRFL024NTRPBF

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Mounting Type

Surface Mount

Power - Max

Fet Type

MOSFET N-Channel, Metal Oxide

Gate Charge (qg) @ Vgs

18.3nC @ 10V

Vgs(th) (max) @ Id

4V @ 250µA

Current - Continuous Drain (id) @ 25° C

2.8A

Drain To Source Voltage (vdss)

55V

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

75 mOhm @ 2.8A, 10V

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

4 A

Power Dissipation

2.1 W

Mounting Style

SMD/SMT

Gate Charge Qg

12.2 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

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Part Number

Manufacturer

Quantity

Price

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Part Number:

IRFL024NTRPBF

Manufacturer:

International Rectifier

Quantity:

1 909

Company:

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Part Number:

IRFL024NTRPBF

Manufacturer:

Quantity:

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Company:

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Part Number:

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Company:

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Part Number:

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Quantity:

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Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount

using vapor phase, infra red, or wave soldering techniques.

Its unique package design allows for easy automatic pick-

and-place as with other SOT or SOIC packages but has

the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation

of 1.0W is possible in a typical surface mount application.

Absolute Maximum Ratings

Thermal Resistance

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

www.irf.com

dv/dt

@ T

Surface Mount

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

Fast Switching

Fully Avalanche Rated

STG

= 25°C

= 70°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation (PCB Mount)**

Power Dissipation (PCB Mount)*

Linear Derating Factor (PCB Mount)*

Gate-to-Source Voltage

Single Pulse Avalanche Energy‚

Avalanche Current

Repetitive Avalanche Energy*

Peak Diode Recovery dv/dt ƒ

Junction and Storage Temperature Range

Junction-to-Amb. (PCB Mount, steady state)*

Junction-to-Amb. (PCB Mount, steady state)**

Parameter

@ 10V**

@ 10V*

Typ.

HEXFET

-55 to + 150

S O T -2 2 3

Max.

11.2

± 20

214

2.8

4.0

2.8

2.3

2.1

1.0

8.3

5.0

0.1

IRFL024N

Max.

DS(on)

Power MOSFET

120

DSS

= 2.8A

PD - 91861A

= 0.075

= 55V

Units

mW/°C

Units

°C/W

V/ns

°C

6/15/99

Related parts for IRFL024NTRPBF

IRFL024NTRPBF Summary of contents

Page 1

... Fast Switching Fully Avalanche Rated l Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRFL024N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRFL024NTRPBF International Rectifier, IRFL024NTRPBF Datasheet

IRFL024NTRPBF

Specifications of IRFL024NTRPBF

Available stocks

Related parts for IRFL024NTRPBF

IRFL024NTRPBF Summary of contents

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