IRF7526D1TRPBF International Rectifier, IRF7526D1TRPBF Datasheet

IRF7526D1TRPBF

Manufacturer Part Number

IRF7526D1TRPBF

Description

MOSFET P-CH 30V 2A MICRO8

Manufacturer

International Rectifier

Series

FETKY™r

Datasheet

1.IRF7526D1TRPBF.pdf (10 pages)

Specifications of IRF7526D1TRPBF

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Diode (Isolated)

Rds On (max) @ Id, Vgs

200 mOhm @ 1.2A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

11nC @ 10V

Input Capacitance (ciss) @ Vds

180pF @ 25V

Power - Max

1.25W

Mounting Type

Surface Mount

Package / Case

Micro8™

Transistor Polarity

P Channel

Continuous Drain Current Id

-2A

Drain Source Voltage Vds

-30V

On Resistance Rds(on)

200mohm

Rds(on) Test Voltage Vgs

-10V

Peak Reflow Compatible (260 C)

Yes

Rohs Compliant

Yes

Resistance Drain-source Rds (on)

400 mOhms

Drain-source Breakdown Voltage

- 30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

- 2 A

Power Dissipation

0.8 W

Gate Charge Qg

7.5 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7526D1TRPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 10
Download datasheet (146Kb)

The FETKY

designer an innovative board space saving solution for switching regulator

applications. Generation 5 HEXFETs utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area. Combining this technology

with International Rectifier's low forward drop Schottky rectifiers results in an

extremely efficient device suitable for use in a wide variety of portable electronics

applications like cell phone, PDA, etc.

The new Micro8

the smallest footprint available in an SOIC outline. This makes the Micro8

device for applications where printed circuit board space is at a premium. The low

profile (<1.1mm) of the Micro8

environments such as portable electronics and PCMCIA cards.

Absolute Maximum Ratings

Thermal Resistance Ratings

Notes:

‚

„

Description

www.irf.com

Parameter

dv/dt

θJA

Co-packaged HEXFET

MOSFET and Schottky Diode

P-Channel HEXFET

Generation 5 Technology

Micro8

Lead-Free

Pulse width ≤ 300µs – duty cycle ≤ 2%

Low V

Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)

@ T

When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance

STG

≤ -1.2A, di/dt ≤ 160A/µs, V

= 25°C

= 70°C

= 25°C

= 70°C

Schottky Rectifier

Footprint

family of co-packaged HEXFETs and Schottky diodes offer the

package, with half the footprint area of the standard SO-8, provides

Parameter

Continuous Drain Current, V

Pulsed Drain Current À

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt Á

Junction and Storage Temperature Range

Junction-to-Ambient

will allow it to fit easily into extremely thin application

≤ V

Power

(BR)DSS

, T

≤ 150°C

@ -4.5V

FETKY

Top View

IRF7526D1PbF

MOSFET & Schottky Diode

an ideal

-55 to +150

Maximum

1.25

± 20

-2.0

-1.6

-5.0

-16

0.8

100

Schottky Vf = 0.39V

DS(on)

DSS

Micro8

= -30V

= 0.20Ω

Units

mW/°C

°C/W

Units

V/ns

°C

Related parts for IRF7526D1TRPBF

IRF7526D1TRPBF Summary of contents

Page 1

... Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc. ...

Page 2

... Max. Forward voltage drop FM I Max. Reverse Leakage current RM C Max. Junction Capacitance t dv/dt Max. Voltage Rate of Charge ( HEXFET is the reg. TM for International Rectifier Power MOSFET 25°C (unless otherwise specified) J Min. Typ. Max. Units Conditions -30 ––– ––– V ...

Page 3

VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 1 -3.0V 20µs PULSE WIDTH T = 25°C J 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. ...

Page 4

IRF7526D1PbF 400 1MHz iss rss oss ds gd 300 C iss C oss 200 C rss 100 0 ...

Page 5

D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 1.5 1.0 VGS = -4.5V 0.5 VGS = -10V 0 ...

Page 6

IRF7526D1PbF Schottky Diode Characteristics 10 1 0.1 0.0 0.2 0.4 Forward Voltage Drop - V Forward Voltage Drop - V Fig. 12 -Typical Forward Voltage Drop Characteristics 6 100 10 0.1 0.01 0.001 0.0001 T = 150° ...

Page 7

Charge Fig 15a. Basic Gate Charge Waveform Fig 16a. Switching Time Test Circuit V GS 10% 90 Fig 16b. Switching Time Waveforms www.irf.com Current Regulator Same Type as D.U.T. .2µF ...

Page 8

IRF7526D1PbF + - + - • • • Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple ≤ Fig 8 • ...

Page 9

Micro8 Package Outline Dimensions are shown in milimeters (inches 0.25 (.010 ...

Page 10

IRF7526D1PbF Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. NOTES ...

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