IRFL024NPBF International Rectifier, IRFL024NPBF Datasheet

IRFL024NPBF

Manufacturer Part Number

IRFL024NPBF

Description

MOSFET N-CH 55V 2.8A SOT223

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRFL024NPBF.pdf (8 pages)

Specifications of IRFL024NPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

75 mOhm @ 2.8A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

2.8A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

18.3nC @ 10V

Input Capacitance (ciss) @ Vds

400pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Configuration

Single Dual Drain

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

75 m Ohms

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

4 A

Power Dissipation

2.1 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Fall Time

17.7 ns

Gate Charge Qg

12.2 nC

Minimum Operating Temperature

- 55 C

Rise Time

13.4 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRFL024NPBF

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Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount

using vapor phase, infra red, or wave soldering techniques.

Its unique package design allows for easy automatic pick-

and-place as with other SOT or SOIC packages but has

the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation

of 1.0W is possible in a typical surface mount application.

Absolute Maximum Ratings

Thermal Resistance

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

www.irf.com

dv/dt

θJA

@ T

Surface Mount

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

Fast Switching

Fully Avalanche Rated

Lead-Free

STG

= 25°C

= 70°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation (PCB Mount)**

Power Dissipation (PCB Mount)*

Linear Derating Factor (PCB Mount)*

Gate-to-Source Voltage

Single Pulse Avalanche Energy‚

Avalanche Current

Repetitive Avalanche Energy*

Peak Diode Recovery dv/dt ƒ

Junction and Storage Temperature Range

Junction-to-Amb. (PCB Mount, steady state)*

Junction-to-Amb. (PCB Mount, steady state)**

Parameter

@ 10V**

@ 10V*

Typ.

HEXFET

-55 to + 150

SOT-223

Max.

11.2

± 20

214

2.8

4.0

2.8

2.3

2.1

1.0

8.3

5.0

0.1

Max.

DS(on)

Power MOSFET

120

DSS

= 2.8A

= 0.075Ω

= 55V

Units

mW/°C

Units

V/ns

°C

Related parts for IRFL024NPBF

IRFL024NPBF Summary of contents

Page 1

... Fully Avalanche Rated l Lead-Free l Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

... IRFL024NPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge ...

Page 3

... BOTTOM 10 1 ° 0.1 10 100 0.1 Fig 2. Typical Output Characteristics, 2 1.5 1.0 0.5 = 25V 0.0 6.0 6.5 -60 -40 -20 Fig 4. Normalized On-Resistance IRFL024NPbF VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage (V) DS 2.8A ...

Page 4

... IRFL024NPbF 700 1MHz iss 600 rss oss iss 500 C oss 400 300 200 C rss 100 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 150 C ° 0.1 0.2 0.4 0.6 0.8 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0 Rectangular Pulse Duration (sec) 1 IRFL024NPbF + - ≤ 1 ≤ 0 d(off thJC C 10 100 ...

Page 6

... IRFL024NPbF D.U 10V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms 6 500 15V 400 DRIVER 300 + V DD 200 - A 100 0 25 Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy V (BR)DSS I D TOP 1.3A 2.2A BOTTOM 2. 100 125 150 ° ...

Page 7

... HEXFE T PRODUCT MARKING T HIS IS AN IRF L014 INT E RNAT IONAL F L014 IER LOGO www.irf.com PART NUMB ER 314P DAT E CODE (YYWW YEAR IGNAT E S LEAD-FREE PRODUCT (OPT IONAL) IRFL024NPbF LOT CODE AXXXX CODE BOT ...

Page 8

... IRFL024NPbF 2.05 (.080) 1.95 (.077) TR FEED DIRECTION 12.10 (.475) 11.90 (.469) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 13.20 (.519) 12.80 (.504) 330.00 (13.000) MAX. NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. ...

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