IRLR014NTRPBF International Rectifier, IRLR014NTRPBF Datasheet

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IRLR014NTRPBF

Manufacturer Part Number
IRLR014NTRPBF
Description
MOSFET N-CH 55V 10A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLR014NTRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
140 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
7.9nC @ 5V
Input Capacitance (ciss) @ Vds
265pF @ 25V
Power - Max
28W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
10A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
140mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRLR014NTRPBF
Quantity:
15 045
Thermal Resistance
www.irf.com
l
l
l
l
l
l
l
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve the lowest
possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
R
R
R
I
I
I
P
V
E
I
E
dv/dt
T
T
D
D
DM
AR
STG
D
GS
AS
AR
J
θJC
θJA
θJA
@ T
@ T
@T
Logic-Level Gate Drive
Surface Mount (IRLR024N)
Straight Lead (IRLU024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
C
C
C
= 25°C
= 100°C
= 25°C
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
–––
–––
–––
IRLR014NPbF
HEXFET Power MOSFET
-55 to + 175
D-Pak
D
S
Max.
± 16
7.1
0.2
6.0
2.8
5.0
28
10
40
35
R
DS(on)
Max.
IRLU014NPbF
V
110
5.3
50
DSS
I
D
I-Pak
= 10A
= 55V
= 0.14Ω
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1
10/01/10

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IRLR014NTRPBF Summary of contents

Page 1

... Fully Avalanche Rated l Lead-Free l Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS VGS TOP 15V TOP 15V 10V 12V 5.0V 10V 4.5V 7.0V 3.5V 5.0V 3.0V 4.5V 2.7V 2.7V BOTTOM BOTTOM 2.5V 2. 2.5V 20µs PULSE WIDTH 0.1 0 ...

Page 4

1MHz iss rss iss 400 oss ds gd 300 C oss 200 C rss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 1 0.10 0.05 SINGLE PULSE (THERMAL RESPONSE) 0.02 0.01 ...

Page 6

D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • - „ • • • • P.W. Period ...

Page 8

EXAMPLE: T HIS IS AN IRFR120 WIT H AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 2001 ASS EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" "P" in assembly line position indicates ...

Page 9

E XAMPLE: T HIS IS AN IRF U120 WIT H AS SEMBLY LOT CODE 5678 ASS EMBLED ON WW 19, 2001 SEMBLY LINE "A" Note: "P" embly line pos ition indicates Lead-Free" OR ...

Page 10

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

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