IRFL024ZPBF International Rectifier, IRFL024ZPBF Datasheet

IRFL024ZPBF

Manufacturer Part Number

IRFL024ZPBF

Description

MOSFET N-CH 55V 5.1A SOT223

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRFL024ZPBF.pdf (10 pages)

2.IRFL024ZPBF.pdf (4 pages)

Specifications of IRFL024ZPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

57.5 mOhm @ 3.1A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

5.1A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

14nC @ 10V

Input Capacitance (ciss) @ Vds

340pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Current, Drain

5.1 A

Gate Charge, Total

9.1 nC

Package Type

SOT-223

Polarization

N-Channel

Power Dissipation

1 W

Resistance, Drain To Source On

46.2 Milliohms

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

30 ns

Time, Turn-on Delay

7.8 ns

Transconductance, Forward

6.2 S

Voltage, Breakdown, Drain To Source

55 V

Voltage, Forward, Diode

1.3 V

Voltage, Gate To Source

±20 V

Configuration

Single Dual Drain

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

57.5 m Ohms

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

5.1 A

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Fall Time

23 ns

Gate Charge Qg

9.1 nC

Minimum Operating Temperature

- 55 C

Rise Time

21 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRFL024ZPBF

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Features

Description

This HEXFET

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of

this design are a 150°C junction operating temperature,

fast switching speed and improved repetitive

avalanche rating . These features combine to make

this design an extremely efficient and reliable device

for use in a wide variety of applications.

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

STG

AS (Thermally limited)

@ T

Advanced Process Technology

Ultra Low On-Resistance

150°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

(Tested )

= 25°C

= 70°C

= 25°C Power Dissipation

Continuous Drain Current, V

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Junction-to-Ambient (PCB mount, steady state)

Power MOSFET utilizes the latest

Ã™

™

Parameter

@ 10V

(Silicon Limited)

IRFL024ZPbF

HEXFET

Typ.

See Fig.12a, 12b, 15, 16

–––

-55 to + 150

Max.

0.02

± 20

5.1

4.1

2.8

1.0

DS(on)

Power MOSFET

DSS

Max.

120

SOT-223

= 5.1A

= 57.5m

PD - 95312A

= 55V

Units

W/°C

°C/W

°C

Related parts for IRFL024ZPBF

IRFL024ZPBF Summary of contents

Page 1

... Storage Temperature Range STG Thermal Resistance R Junction-to-Ambient (PCB mount, steady state Junction-to-Ambient (PCB mount, steady state) JA www.irf.com G Parameter @ 10V (Silicon Limited 10V GS ™ Parameter 95312A IRFL024ZPbF ® HEXFET Power MOSFET 55V DSS R = 57.5m DS(on 5. SOT-223 Max. Units 5.1 4.1 41 2.8 1.0 W 0.02 W/° ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 4.5V 30µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150°C 10 ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 1000 C iss C oss 100 ...

Page 5

T A ,Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE ( THERMAL ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 1 0.01 0.05 0.10 0.1 0.01 1.0E-05 1.0E-04 Fig 15. Typical Avalanche Current vs.Pulsewidth 14 TOP Single Pulse BOTTOM 1% Duty Cycle 3. ...

Page 8

D.U.T + ƒ ‚ - SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 9

HEXFET PRODUCT MARKING THIS IS AN IRFL014 INT ERNAT IONAL RECTIF IER LOGO Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com ...

Page 10

TR FEED DIRECTION 12.10 (.475) 11.90 (.469) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 13.20 (.519) 12.80 (.504) 330.00 (13.000) MAX. NOTES ...

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