IRFL4105TRPBF International Rectifier, IRFL4105TRPBF Datasheet

IRFL4105TRPBF

Manufacturer Part Number

IRFL4105TRPBF

Description

MOSFET N-CH 55V 3.7A SOT223

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRFL4105TRPBF.pdf (9 pages)

Specifications of IRFL4105TRPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

45 mOhm @ 3.7A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

3.7A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

35nC @ 10V

Input Capacitance (ciss) @ Vds

660pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Transistor Polarity

N Channel

Continuous Drain Current Id

3.7A

Drain Source Voltage Vds

55V

On Resistance Rds(on)

45mohm

Rds(on) Test Voltage Vgs

10V

Peak Reflow Compatible (260 C)

Yes

Rohs Compliant

Yes

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

3.7 A

Power Dissipation

2.1 W

Mounting Style

SMD/SMT

Gate Charge Qg

23 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRFL4105TRPBF
IRFL4105TRPBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFL4105TRPBF

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRFL4105TRPBF

Quantity:

9 000

Company:

H&T Electronics

Part Number:

IRFL4105TRPBF

Quantity:

3 000

Current page: 1 of 9
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Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount

using vapor phase, infra red, or wave soldering techniques.

Its unique package design allows for easy automatic pick-

and-place as with other SOT or SOIC packages but has the

added advantage of improved thermal performance due to

an enlarged tab for heatsinking. Power dissipation of 1.0W

is possible in a typical surface mount application.

Absolute Maximum Ratings

Thermal Resistance

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

www.irf.com

dv/dt

θJA

@ T

Surface Mount

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

Fast Switching

Fully Avalanche Rated

Lead-Free

STG

= 25°C

= 70°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation (PCB Mount)**

Power Dissipation (PCB Mount)*

Linear Derating Factor (PCB Mount)*

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Junction-to-Amb. (PCB Mount, steady state)*

Junction-to-Amb. (PCB Mount, steady state)**

Parameter

@ 10V**

@ 10V*

Typ.

IRFL4105PbF

HEXFET

-55 to + 150

SOT-223

Max.

0.10

± 20

110

5.2

3.7

3.0

2.1

1.0

8.3

5.0

3.7

DS(on)

Max.

Power MOSFET

120

DSS

= 3.7A

= 0.045Ω

= 55V

PD- 95319

mW/°C

Units

°C/W

V/ns

°C

05/25/04

Related parts for IRFL4105TRPBF

IRFL4105TRPBF Summary of contents

Page 1

... Fast Switching Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRFL4105PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 4.5V 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ...

Page 4

IRFL4105PbF 1200 1MHz iss rss gd 1000 oss iss 800 C oss 600 400 C rss ...

Page 5

Q G 10V Charge Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. 3mA Current Sampling Resistors Fig 9b. Gate ...

Page 6

IRFL4105PbF D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms 6 300 15V 250 DRIVER 200 + - V DD 150 ...

Page 7

D.U Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent * V GS www.irf.com Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane ...

Page 8

IRFL4105PbF SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HEXFET PRODUCT MARKING THIS IS AN IRFL014 INTERNATIONAL FL014 RECTIFIER LOGO TOP 8 LOT CODE PART NUMBER 314P A = ASSEMBLY SITE DATE CODE ...

Page 9

SOT-223 (TO-261AA) Tape & Reel Information Dimensions are shown in milimeters (inches) 2.05 (.080) 1.95 (.077) TR FEED DIRECTION 12.10 (.475) 11.90 (.469) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) ...

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