IRLR024NTRRPBF International Rectifier, IRLR024NTRRPBF Datasheet

MOSFET N-CH 55V 17A DPAK

IRLR024NTRRPBF

Manufacturer Part Number
IRLR024NTRRPBF
Description
MOSFET N-CH 55V 17A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLR024NTRRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
65 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 5V
Input Capacitance (ciss) @ Vds
480pF @ 25V
Power - Max
45W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
17A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
65mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLR024NTRRPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRLR024NTRRPBF
Manufacturer:
MAXIM
Quantity:
4 285
l
l
l
l
l
l
l
Fifth Generation HEXFET
utilize advanced processing techniques to achieve the lowest possible on-
resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient device for use in
a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Thermal Resistance
www.irf.com
R
R
R
I
I
I
P
V
E
I
E
dv/dt
T
T
D
D
DM
AR
STG
D
GS
AR
J
AS
θJC
θJA
θJA
@ T
@ T
Logic-Level Gate Drive
Surface Mount (IRLR024N)
Straight Lead (IRLU024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
C
C
C
= 100°C
= 25°C
= 25°C
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
®
Power MOSFETs from International Rectifier
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
–––
–––
–––
HEXFET
S
D
-55 to + 175
Max.
± 16
0.3
4.5
5.0
17
12
72
45
68
11
D-Pak
IRLR024NPbF IRLU024NPbF
®
R
IRLR024NPbF
IRLU024NPbF
Power MOSFET
DS(on)
Max.
V
110
3.3
50
DSS
I
D
= 17A
= 0.065Ω
= 55V
I-Pak
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1
12/6/04

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IRLR024NTRRPBF Summary of contents

Page 1

... Lead-Free l ® Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2. 2.5V 20µs PULSE WIDTH T = 25°C J 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T = 25°C ...

Page 4

1MHz iss rss oss iss 600 400 C oss 200 C rss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) ...

Page 6

D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel www.irf.com + • • ƒ • - „ • • ...

Page 8

EXAMPLE: T HIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 EMBLY LINE "A" Note: "P" sembly line pos ition indicates "Lead-Free" OR INT ERNAT ...

Page 9

EXAMPLE: T HIS IS AN IRFU120 WIT EMBLY LOT CODE 5678 AS S EMBLED ON WW 19, 1999 EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" OR INT ERNAT ...

Page 10

NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS TO ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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