IRF7521D1PBF International Rectifier, IRF7521D1PBF Datasheet

IRF7521D1PBF

Manufacturer Part Number

IRF7521D1PBF

Description

MOSFET N-CH 20V 2.4A MICRO8

Manufacturer

International Rectifier

Series

FETKY™r

Datasheet

1.IRF7521D1PBF.pdf (8 pages)

Specifications of IRF7521D1PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Diode (Isolated)

Rds On (max) @ Id, Vgs

135 mOhm @ 1.7A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

2.4A

Vgs(th) (max) @ Id

700mV @ 250µA

Gate Charge (qg) @ Vgs

8nC @ 4.5V

Input Capacitance (ciss) @ Vds

260pF @ 15V

Power - Max

1.3W

Mounting Type

Surface Mount

Package / Case

Micro8™

Transistor Polarity

N Channel

Continuous Drain Current Id

2.4A

Drain Source Voltage Vds

20V

On Resistance Rds(on)

135mohm

Rds(on) Test Voltage Vgs

4.5V

Peak Reflow Compatible (260 C)

Yes

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Description

The FETKY

designer an innovative board space saving solution for switching regulator

applications. Generation 5 HEXFETs utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area. Combining this technology

with International Rectifier's low forward drop Schottky rectifiers results in an

extremely efficient device suitable for use in a wide variety of portable electronics

applications like cell phone, PDA, etc.

The new Micro8

provides the smallest footprint available in an SOIC outline. This makes the Micro8

an ideal device for applications where printed circuit board space is at a premium.

The low profile (<1.1mm) of the Micro8

application environments such as portable electronics and PCMCIA cards.

Absolute Maximum Ratings (T

Thermal Resistance Ratings

Notes:

www.irf.com

Parameter

dv/dt

Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)

Pulse width

Surface mounted on FR-4 board, t

Co-packaged HEXFET

and Schottky Diode

N-Channel HEXFET

Low V

Generation 5 Technology

Micro8

@ T

STG

1.7A, di/dt

= 25°C

= 70°C

= 25°C

= 70°C

Schottky Rectifier

Footprint

family of co-packaged HEXFETs and Schottky diodes offer the

300µs; duty cycle

66A/µs, V

package, with half the footprint area of the standard SO-8,

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Junction-to-Ambient

Power MOSFET

(BR)DSS

10sec.

, T

will allow it to fit easily into extremely thin

= 25°C unless otherwise noted)

PRELIMINARY

150°C

@ 4.5V

FETKY MOSFET / Schottky Diode

T op V ie w

-55 to +150

Maximum

IRF7521D1

Maximum

± 12

2.4

1.9

1.3

0.8

5.0

100

Schottky Vf = 0.39V

DS(on)

DSS

Micro8

= 0.135

= 20V

Units

mW/°C

°C/W

Units

V/ns

PD-91646C

°C

01/29/99

Related parts for IRF7521D1PBF

IRF7521D1PBF Summary of contents

Page 1

... Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc. ...

Page 2

... Max. Forward voltage drop FM I Max. Reverse Leakage current RM C Max. Junction Capacitance t dv/dt Max. Voltage Rate of Charge ( HEXFET is the reg. TM for International Rectifier Power MOSFET 25°C (unless otherwise specified) J Min. Typ. Max. Units Conditions 20 ––– ––– V ...

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IRF7521D1PBF International Rectifier, IRF7521D1PBF Datasheet

IRF7521D1PBF

Specifications of IRF7521D1PBF

Related parts for IRF7521D1PBF

IRF7521D1PBF Summary of contents

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