IRFL4315PBF International Rectifier, IRFL4315PBF Datasheet

MOSFET N-CH 150V 2.6A SOT223

IRFL4315PBF

Manufacturer Part Number
IRFL4315PBF
Description
MOSFET N-CH 150V 2.6A SOT223
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRFL4315PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
185 mOhm @ 1.6A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
420pF @ 25V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Channel Type
N
Current, Drain
2.6 A
Gate Charge, Total
12 nC
Package Type
SOT-223
Polarization
N-Channel
Power Dissipation
2.8 W
Resistance, Drain To Source On
185 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
20 ns
Time, Turn-on Delay
8.4 ns
Transconductance, Forward
3.5 S
Voltage, Breakdown, Drain To Source
150 V
Voltage, Drain To Source
150 V
Voltage, Forward, Diode
1.5 V
Voltage, Gate To Source
±30 V
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
185 m Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
2.6 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
19 ns
Gate Charge Qg
12 nC
Minimum Operating Temperature
- 55 C
Rise Time
21 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
l
Benefits
l
l
l
l
Thermal Resistance
Applications
Absolute Maximum Ratings
www.irf.com
I
I
I
P
V
dv/dt
T
T
Symbol
R
Notes  through † are on page 8
D
D
DM
J
STG
D
GS
@ T
@ T
and Current
JA
App. Note AN1001)
Effective C
High frequency DC-DC converters
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Lead-Free
@T
Switching Losses
A
A
A
= 25°C
= 70°C
= 25°C
OSS
Junction-to-Ambient (PCB Mount, steady state)
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
to Simplify Design, (See
Parameter
Parameter
GS
GS
@ 10V
@ 10V
V
150V
DSS
Typ.
300 (1.6mm from case )
–––
IRFL4315PbF
185
HEXFET
-55 to + 150
R
mW
Max.
0.02
DS(on)
± 30
2.6
2.1
2.8
6.3
21
@V
®
GS
Power MOSFET
max
Max.
SOT-223
45
= 10V 2.6A
Units
Units
W/°C
09/22/10
°C/W
I
V/ns
D
°C
W
A
V
1

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IRFL4315PBF Summary of contents

Page 1

... T Operating Junction and J T Storage Temperature Range STG Soldering Temperature, for 10 seconds Thermal Resistance Symbol Parameter R Junction-to-Ambient (PCB Mount, steady state) JA Notes  through † are on page 8 www.irf.com IRFL4315PbF HEXFET V R DSS mW 150V 185 Max. @ 10V GS @ 10V GS 0.02 - 150 300 (1.6mm from case ) Typ. „ ...

Page 2

... IRFL4315PbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... TOP 10 BOTTOM 5.5V 5.5V 1 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 2 2.0 1.5 1.0 0.5 0.0 -60 9.0 10.0 Fig 4. Normalized On-Resistance IRFL4315PbF VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage (V) 2. 10V GS -40 ...

Page 4

... IRFL4315PbF 10000 0V MHZ C iss = SHORTED C rss = oss = 1000 C iss 100 C oss C rss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 ° 150 0.1 0.0 0.5 1.0 1.5 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 1. 100 1000 Fig 6. Typical Gate Charge Vs. ...

Page 5

... RESPONSE) 0.1 0.00001 0.0001 0.001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak T 0.01 0 Rectangular Pulse Duration (sec) 1 IRFL4315PbF + - d(off thJA A 1 ...

Page 6

... IRFL4315PbF 240 220 200 180 10V 160 140 120 100 Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. V 50K 12V . D.U. 3mA Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform V (BR)DSS 20V Fig 15a&b. Unclamped Inductive Test circuit ...

Page 7

... For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com LOT CODE PART NUMBER 314P DAT E CODE EMBLY CODE (YYWW YEAR WW = WEEK DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) IRFL4315PbF AXXXX BOT ...

Page 8

... IRFL4315PbF 2.05 (.080) 1.95 (.077) TR FEED DIRECTION 12.10 (.475) 11.90 (.469) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 13.20 (.519) 12.80 (.504) 330.00 (13.000) MAX. NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. ...

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