IRF7807D1PBF International Rectifier, IRF7807D1PBF Datasheet
IRF7807D1PBF
Specifications of IRF7807D1PBF
Related parts for IRF7807D1PBF
IRF7807D1PBF Summary of contents
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... Current (V GS Pulsed Drain Current Power Dissipation Schottky and Body Diode Average ForwardCurrent„ Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambientƒ www.irf.com IRF7807D1PbF FETKY™ MOSFET / SCHOTTKY DIODE SO-8 ® MOSFETs and Symbol 25° 70° ...
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Electrical Characteristics Parameter Drain-to-Source V (BR)DSS Breakdown Voltage* Static Drain-Source R (on Resistance* Gate Threshold Voltage* V (th) GS Drain-Source Leakage I DSS Current* Gate-Source Leakage I GSS Current* Total Gate Charge Q gsync Synch FET* Total Gate ...
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VGS TOP 4.5V 3.5V 3.0V BOTTOM 2.5V 10 380µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 60 VGS TOP 4.5V 3.5V 50 3.0V 2.5V 2.0V BOTTOM 0.0V ...
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1MHz iss rss 1600 oss ds gd 1200 C iss 800 C oss 400 ...
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7.0A 0.02 0.01 2.0 4.0 6.0 V GS, Gate -to -Source Voltage (V) Fig 9. On-Resistance Vs. Gate Voltage 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 1 ...
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MOSFET , Body Diode & Schottky Diode Characteristics 100 Tj = 125° 25° 0.1 0.0 0.2 0.4 0.6 Forward Voltage Drop - Fig Typical Forward Voltage Drop Characteristics 6 ...
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SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010] NOT DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ...
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SO-8 Tape and Reel Dimensions are shown in milimeters (inches) This product has been designed and qualified for the Consumer market. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 TERMINAL NUMBER 1 8.1 ...