STS11NF30L STMicroelectronics, STS11NF30L Datasheet
STS11NF30L
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STS11NF30L Summary of contents
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... Order codes Part number STS11NF30L January 2007 N-channel 30V - 0.0085Ω - 11A SO-8 Low gate charge STripFET™ II Power MOSFET R I DS(on) D <0.009Ω 11A Internal schematic diagram Marking 11F30L- Rev 11 STS11NF30L S0-8 Package Packaging SO-8 Tape & reel 1/12 www.st.com 12 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ STS11NF30L . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...
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... STS11NF30L 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT Derating factor (3) dv/dt Peak diode recovery voltage slope T Operating junction temperature J T Storage temperature stg 1 ...
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... GS D Parameter Test conditions V = 25V 25V MHz 15V =5V GS Parameter Test conditions V = =4.7Ω (see Figure 13 15V 4.7Ω (see Figure 13) STS11NF30L Min. Typ 250µ 5.5A 0.0085 D 0.0145 = 5.5A Min. Typ. =5. 1440 560 135 22.5 = 11A Min. Typ. =5.5A 5.5A Max ...
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... STS11NF30L Table 6. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ...
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... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/12 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STS11NF30L ...
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... STS11NF30L Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized Breakdown Voltage vs Temperature 7/12 ...
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... Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/12 Figure 14. Gate charge test circuit Figure 16. Unclamped Inductive load test circuit Figure 18. Switching time waveform STS11NF30L ...
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... STS11NF30L 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...
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... STS11NF30L inch MIN. TYP. MAX. 0.068 0.003 0.009 0.064 0.025 0.033 0.013 0.018 0.007 0.010 0.010 0.019 0.188 0.196 0.228 0.244 ...
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... STS11NF30L 5 Revision history Table 7. Revision history Date 09-Sep-2004 17-Aug-2006 12-Jan-2007 Revision 9 Complete version 10 The document has been reformatted 11 Updates in Safe operating area Revision history Changes 11/12 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STS11NF30L ...